在Si(111)基片上采用脉冲激光沉积(PLD)方法,烘烤温度300℃,制备得到非晶态SrTiO3薄膜.采用快速晶化处理,将非晶态SrTiO3薄膜在不同温度、不同晶化处理时间下进行了晶化处理,采用GIXRD和AFM分析检验晶化的效果和表面形貌.结果表明,SrTiO3晶化程度强烈依赖处理温度,处理温度越高,晶化程度越高;在同一温度下,增加处理时间有助于提高晶化效果,并获得致密、表面平整、均匀的SrTiO3晶态薄膜;晶粒大小不随晶化处理时间明显变化.在快速晶化处理过程中,非晶态SrTiO3薄膜在极短时间内达到晶化温度,并形成大量晶核,从而使晶粒生长受到限制,有利于获得更好的晶化效果.
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