以TiO2、B4C和C为原料,基于原位合成法在SiC基体中生成TiB2颗粒,并采用无压烧结法制备出TiB2/SiC复合陶瓷.通过对复合材料制备工艺的研究,发现:高于1 300℃的预烧结能形成TiB2/SiC复合陶瓷坯体.C含量、烧结温度和保温时间对复合材料的相对密度均有影响.当C含量(质量分数)为4%时、在1 400℃×60min+2000℃×30 min的烧结工艺下能够制备出致密的TiB2/SiC陶瓷复合材料.微米级TiO2粉比纳米级TiO2粉更有利于形成较致密的烧结复合材料.随着生成TiB2体积分数的增加(5%～20%),复合材料中TiB2颗粒逐渐粗化,间距逐渐变小.对复合材料的烧结机理还进行了分析.
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