利用脉冲激光蒸发或高温物理升华的方法,制备出纯度极高、直径分布均匀(13nm左右)的硅的一维量子线.光致发光(PL)测量显示,在313.5nm激光激发下,室温下硅量子线具有红绿蓝三色发光.对硅量子线进行氧化处理后,随氧化时间的增加,红光PL峰发生蓝移,而绿、蓝峰没有移动.红光PL与量子尺寸限制效应有关,而绿、蓝光PL来源于表层氧化硅中的缺陷发光.
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