热场对雾化裂解CVD沉积的薄膜厚度均匀性的影响

1.浙江大学硅材料国家重点实验室,浙江,杭州,310027

2.浙江大学硅材料国家重点实验室,浙江,杭州,310027

3.浙江大学硅材料国家重点实验室,浙江,杭州,310027

4.浙江大学硅材料国家重点实验室,浙江,杭州,310027

基金项目: 国家重点基础研究发展计划(973计划)(G2000 0683-06)

Influence of Hot Zone on the Thickness Uniformity of Thin Films Prepared by Nebulized Pyrolysis CVD

本文利用计算机程序简单模拟了圆盘状加热器和圆筒状加热器的热场分布,研究了热场对雾化裂解CVD法生长的半导体薄膜厚度均匀性的影响,并采用雾化裂解CVD技术制备了高度c轴取向的ZnO薄膜.实验结果表明利用圆筒形加热器及对衬底位置的控制可以在较小的加热器内获得相对尺寸大、厚度均匀性较好ZnO薄膜.

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