利用从固态相变产生的沉淀相惯习面总结出的Δg平行法则,计算了β-FeSi2半导体薄膜和Si基体之间可能的择优取向关系.根据界面匹配和结构的分析,建议最优衬底基面的晶体学位向.预测的界面是一个无理面,含有原子尺度台阶,晶格间具有良好匹配关系.以该界面位向作为Si衬底的基面有可能导致高质量金属硅化物β-FeSi2薄膜的生长.
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