采用溶胶-凝胶提拉法在石英玻璃衬底上生长了ZnO薄膜.对薄膜的XRD分析表明ZnO薄膜为纤锌矿结构并沿c轴择优取向生长.透射光谱表明薄膜的禁带宽度为3.28eV,与ZnO体材料的禁带宽度3.30eV基本相同.用荧光光谱分析了经过400~600℃热处理获得的ZnO薄膜,结果表明ZnO薄膜在室温下可获得较强的紫外带边发射.适当选择热处理温度可以获得无可见波段发射的ZnO薄膜.
参考文献
[1] | V Srikant;D R Clarke .[J].Journal of Applied Physics,1998(83):5447. |
[2] | S King;J G E Gardeniers;I W Boyd .[J].Applied Surface Science,1996,96-98:811. |
[3] | B.J.Jin;S.H.Bac;S.Y.Lee .[J].Materials Science and Engineering,2000,B71:301. |
[4] | 宋登元,王永青,孙荣霞,宗晓萍,郭宝增.Ar气压对射频磁控溅射铝掺杂ZnO薄膜特性的影响[J].半导体学报,2002(10):1078-1082. |
[5] | C Eberspaoher;A L Fahrenbruch;R H Bube .[J].THIN SOLID FILMS,1986,136:1. |
[6] | M F Ogawa;Y Natsume;T Hirayama;HSakata .[J].Journal of Materials Science Letters,1990,9:1351. |
[7] | Y Natsume;H Sakata;T Hirayama;HYanagida .[J].Journal of Applied Physics,1992,72:4203. |
[8] | D.D.Malinoska .[J].Materials Science and Engineering,1998,B52:59. |
[9] | 叶志镇,陈汉鸿,刘榕,张昊翔,赵炳辉.直流磁控溅射ZnO薄膜的结构和室温PL谱[J].半导体学报,2001(08):1015-1018. |
[10] | S L King et al.[J].Applied Surface Science,1996,96-98:811-818. |
[11] | D.Bao;H.Gu et al.[J].Ferroelectrics,1996,186:211-214. |
[12] | Johnson M A L;Fujita S;Rowland et al.[J].Journal of Electronic Materials,1996,25(05):855-862. |
[13] | Kang H B;Nakamura K;Yoshida K et al.[J].Journal of Applied Physiology,1997(36):L933-L935. |
[14] | Nunes P;Malic A et al.[J].Vacuum,1999,52:45-49. |
[15] | 杨成兴,季振国,刘坤,樊瑞新,叶志镇.雾化热解法制备ZnO薄膜及其光电性能[J].半导体学报,2002(10):1083-1087. |
[16] | Vanheusden K;Seager CH et al.[J].Applied Physics Letters,1996,68(03):403-405. |
[17] | Look D C;Reynolds D C et al.[J].Materials Science and Engineering B,1999,66:30-32. |
[18] | Bagnall DM.;Shen MY.;Zhu Z.;Goto T.;Yao T.;Chen YF. .Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE[J].Journal of Crystal Growth,1998(0):605-609. |
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