用15keV的N+和Ar+注入PES膜,纯PES膜表面电导率提高了5个数量级,掺碘PES膜表面电导率提高4个数量级.表面电导率已达到半导体水平.表面电导率随剂量的变化关系具有饱和性.掺碘使未注入的PES膜表面电导率提高近一个数量级,掺碘对提高注入离子的PES膜的表面电导率作用不大.在低剂量时,注Ar+样品的表面电导率大于注N+样品的表面电导率.在最高剂量时,表面电导率和注入离子的种类无关.离子注入PES膜的表面电导率在空气中非常稳定.注入层的玻璃化转变温度随注入剂量的增加而降低,玻璃化温度降低和注入离子的种类无关.表面电导率随温度(20℃～180℃)的变化关系为σ＝C0exp(-K/T).
参考文献
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