为制备符合铁电存储器件要求的高质量铁电薄膜,采用溶胶-凝胶(Sol-Gel)工艺,制备了Si基Bi4Ti3O12铁电薄膜及MFS结构的Ag/Bi4Ti3O12/P-Si异质结,对Bi4Ti3O12薄膜的相结构特征及异质结的C-V特性进行了测试与分析.XRD图谱显示,Si基Bi4Ti3O12薄膜具有沿c-轴择优取向生长的趋势,而Ag/Bi4Ti3O12/p-Si异质结顺时针回滞的C-V特性曲线则表明,该异质结可实现电极化存储.此外,对该异质结C-V特性曲线的非对称及向负偏压方向偏移的产生原因也进行了分析.在此基础上,为提高铁电薄膜的铁电性能及改善其C-V特性提出了合理的结构设想.
参考文献
| [1] | J F Scott;C A Araujo .[J].科学(上海),1989,246:1400-1405. |
| [2] | W A Geideman .[J].IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control,1991,38:704-741. |
| [3] | HuaWang;Jun Yu;Wenli Zhou et al.[J].Japanese Journal of Applied Physics,2001,40(3A):1388-1390. |
| [4] | J F Scott .[J].Ferroelectrics,2000,241:247-258. |
| [5] | E C Sarao .[J].Journal of the American Ceramic Society,1962,45(04):166-169. |
| [6] | D.Rugar;P. Hansma .[J].Physics Today,1990,43(10):23-30. |
| [7] | K Ntu;J W Mayer;L C Feldman.Electric Thin Film Sciences:For Electrical engineers & Material Scientists[M].Macmilan College Publishing Company,Inc,1992 |
| [8] | N Maffei;S B Krupanidhi .[J].Journal of Applied Physiology,1992,72(08):3617-3621. |
| [9] | 王华.Si基Bi4Ti3O12薄膜电滞回线及铁电性能的研究[J].压电与声光,2003(06):501-504. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%