Bi4 Ti3O12是典型的层状钙钛矿结构铁电材料,具有优良的压电、铁电、热释电和电光等性能,可广泛应用于铁电存储器、压电和电光等器件.本文在硅衬底上利用溶胶凝胶法制备出Bi4 Ti3O12铁电薄膜,并且对其性能进行了研究.测量不同退火温度下得到的Ag/BTO/p-Si结构的C-V曲线,结果表明Bi4 Ti3O12薄膜在合适的制备工艺下可望实现极化型存储.
Bismuth Titanate (Bi4Ti3 O12 ) thin films were fabricated on p-Si substrates by Sol-Gel method. The effect of annealingtemperature on physical structure and ferroelectric properties of Bi4Ti3O12 thin films has been investigated. The X-ray diffraction (XRD)results show that the single perovskite phase of Bi4 Ti3 O12 can be obtained at 600℃. This metal-ferroelectric-semiconductor structure showeda capacitor-voltage (C-V) hysteresis due to ferroelectric polarization.
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