由于有机分子材料和聚合物材料本身的各种优良性质,用其取代传统的无机半导体材料来修饰电信号具有非常广阔的研究前景.本文简要介绍了近年来有机电双稳材料与器件在电存储方面的研究进展,并讨论了有机电双稳器件(OEBD)目前存在的问题以及今后发展的方向.
参考文献
[1] | L.V.Gregor .[J].Thin Solid Films,1968,2:95. |
[2] | Y Segui;Bui Ai;H Carchano .[J].Journal of Applied Physics,1976,47:140-143. |
[3] | L.F.Pender;R.J Fleming .[J].Journal of Applied Physics,1975,46:3426-3431. |
[4] | R.S Potember;T O Poehler;D O Cowan .[J].Applied Physics Letters,1979,34:405-407. |
[5] | R S Potember;R C Hoffman;T O Poehler .[J].Johns Hopkins Apl Technical Digest,1986,7:129-141. |
[6] | K Sakai;H Matsuda;H Kawada;K Eguchi T Nakagiri .[J].Applied Physics Letters,1988,53:1274-1276. |
[7] | J.P Gong;Y Osada .[J].Applied Physics Letters,1992,61:2787-2789. |
[8] | H.J Gao;L.P Ma;H.X Zhang;H.Y Chen Z.Q Xue S.J Pang. .[J].J Vac Sci Technol,1997,15:1581-1583. |
[9] | 马立平,杨文军,薛增泉,陈慧英,庞世瑾.有机复合薄膜中超高密度信息存储研究[J].物理学报,1998(07):1229-1232. |
[10] | Z.Y Hua;G.R Chen;W Xu;D.Y Chen .[J].Applied Surface Science,2001,169-170:447-451. |
[11] | L.P Ma;J Liu;Y Yang .[J].Applied Physics Letters,2002,80:2997-2999. |
[12] | L.P Ma;S Pyo;J.Y Ouyang;Q.F Xu Y Yang .[J].Applied Physics Letters,2003,82:1419-1421. |
[13] | W Xu;G.R Chen;R.J Li;Z.Y Hua .[J].Applied Physics Letters,1995,67:2241-2242. |
[14] | 夏熸;徐伟;农吴 等.[J].真空科学与技术,2001,21:349-351. |
[15] | 刘春明,吕银祥,郭鹏,农昊,蔡永挚,徐伟,潘星龙,华中一,周峥嵘,陶凤岗.一种具有极性记忆效应的热可擦有机电双稳薄膜[J].真空电子技术,2003(06):11-14. |
[16] | T Oyamada;H Yanaka;K Matsushige;H Sasabe C Adachi .[J].Applied Physics Letters,2003,83:1252-1254. |
[17] | S Moller;C Perlov;W Jackson;C Taussig S R Forrest .[J].Nature,2003,426:166-169. |
[18] | L.D Bozano;B W Kean;V R Deline;J R Salem J C.Scott .[J].Applied Physics Letters,2003,84:607-609. |
[19] | L.P Ma;Y.L Song;H.J Gao;W.B Zhao H.Y Chen Z.Q Xue S.J Pang .[J].Applied Physics Letters,1996,69:3752-3753. |
[20] | L. P. Ma;W. J. Yang;Z. Q. Xue .Data storage with 0.7 nm recording marks on a crystalline organic thin film by a scanning tunneling microscope[J].Applied physics letters,1998(1/6):850-852. |
[21] | 时东霞,张昊旭,解思深,庞世瑾,高鸿钧,宋延林.有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储[J].物理学报,2001(02):361-364. |
[22] | H.J Gao;K Sohlberg;Z.Q Xue;H.Y Chen S.M Hou L.P Ma X.W Fang S.J Pang S J Pennycook .[J].Physical Review Letters,2000,84:1780-1783. |
[23] | D.X Shi;Y.L Song;D.B Zhu;H.X Zhang S.S Xie S.J Pang H.J Gao .[J].Advanced Materials,2001,13:1103-1104. |
[24] | D Ma;M Aguiar;J A Freire;I A Hummelgen .[J].Advanced Materials,2000,12:1063-1066. |
[25] | Regina M.Q;Mello E.C;Azevedo A;Meneguzzi M Aguiar L Akcelrud I.A .Hummelgen[J].Macromolecular Materials and Engineering,2002,287:466-469. |
[26] | A Bandyopadhyay;A J Pal .[J].Applied Physics Letters,2003,82:1215-1217. |
[27] | A Bandyopadhyay;A J Pal .[J].Journal of Physical Chemistry B,2003,107:2531-2536. |
[28] | A Bandyopadhyay;A J Pal .[J].Applied Physics Letters,2004,84:999-1001. |
[29] | 郭鹏,蔡永挚,刘春明,吕银祥,徐伟,潘星龙,华中一.一种电可擦写可读出的有机薄膜存储器件[J].功能材料,2004(z1):1186-1188,1192. |
[30] | 王科志,张昊旭,王大伟,薛增泉.有机及有机金属化合物薄膜电开关特性[J].真空科学与技术,1996(04):277-285. |
[31] | C Li;W Fan;B Lei;D.H Zhang S Han T Tang X.L.Liu Z.Q Liu S Asano M Meyyappan J Han C.W Zhou .[J].Applied Physics Letters,2004,84:1949-1951. |
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