利用傅立叶红外光谱仪研究了掺氮直拉单晶硅(NCZ)和普通直拉单晶硅(CZ)的原生氧沉淀以及模拟太阳电池制备热处理工艺下的氧沉淀行为.结果发现,掺氮直拉单晶硅的原生氧沉淀浓度比普通直拉单晶硅的略高,这是因为氮在晶体生长过程中可以促进氧沉淀.但是在模拟太阳电池制备热处理工艺中掺氮直拉单晶硅和普通直拉单晶硅一样,没有氧沉淀产生.这表明在太阳电池的短时间热处理工艺中,氮不会对氧沉淀产生影响,不会影响磷吸杂的效果.
参考文献
| [1] | Shimura F .Redissolution of precipitated oxygen in Czochralski-grown silicon wafers[J].Applied Physics Letters,1981,39:987. |
| [2] | Romanowski A;Rozgonyi G;Tamatsuka M.Observation of change in shape of oxygen precipitates in high-temperature annealed silicon by transmission electron microscopy[J].Journal of Applied Physics,1999:718. |
| [3] | Sakai K;Yamagami T;Ojima K .Observation of change in shape of oxygen.precipitates in high-temperature annealed silicon by transmission electron microscopy[J].Applied Physics Letters,1999,74:1675. |
| [4] | Chiou H D .The effects of preheatings on axial oxygen precipi-tation uniformity in czochralski silicon crystals[J].Journal of the Electrochemical Society,1992,139:1860. |
| [5] | Hawkins G A;Lavine J P .The effect of rapid thermal annealing on the precipitation of oxygen in silicon[J].Applied Physics Letters,1989,65:3644. |
| [6] | Maddalon-Vinante C;Ehret E;Barbier D .Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon[J].Applied Physics Letters,1996,79:2707. |
| [7] | M Itsumi;H Akiya;T Ueki;M.Tomita, M.Yamawaki .The composi-tion of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon[J].Applied Physics Letters,1995,78:5984. |
| [8] | D Yang;X Ma;R Fan;J.Zang, L.Li, D.Que. Physica B .Oxygen precipitation in nitrogen doped Czochralski silicon[J].Physical Review B,1999,273-274:308. |
| [9] | Q Sun;K H Yao;H C Gatos;J.Lagowsji .Effects of nitrogen on oxygen precipitation in silicon[J].Applied Physics Letters,1992,71:3760. |
| [10] | Deren Yang;Xuegong Yu .[J].Defect and Diffusion Forum,2004,230-232:199. |
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