本文研究了快速热处理工艺(RTP)在模拟的CMOS热处理工艺中对直拉硅单晶中氧沉淀和洁净区(DZ)的影响.研究表明:在模拟的CMOS热处理工艺之前,应用快速热处理(1250℃,50s)代替常规炉处理(1200℃,2h)消除直拉硅单晶热历史,可以更有效地消融原生氧沉淀.经过CMOS热处理工艺后,硅片的表面存在宽度约为20μm的洁净区(DZ),同时其体内有较高密度的体缺陷(BMD).
参考文献
[1] | Borghesi A;Pivac B;Sassella A et al.[J].Journal of Applied Physics,1995,77:4169. |
[2] | Kissinger G;Vanhellemont J;Obermeier G et al.[J].Materials Science and Engineering B,2000,73:106. |
[3] | M Schrems;G Hobler;H Potzl.[A]. |
[4] | Yang D;LuJ .[J].Materials Science and Engineering,2002,B91-92:495. |
[5] | Xu J;Ma X .[J].Physical Review B,2004,348:226. |
[6] | Yin C P;Hsiao C C;Lin T F .[J].Journal of Crystal Growth,2000,217:210. |
[7] | Gluck M;Lerch W;Lofelmacher D et al.[J].Microelectronic Engineering,1999,45:237. |
[8] | Pagani M;Falster R J;Fisher G R et al.[J].Applied Physics Letters,1997,70:1572. |
[9] | Falster R.;Voronkov VV. .The engineering of intrinsic point defects in silicon wafers and crystals[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(1/3):87-94. |
[10] | Lin L;Ma X .[J].Semiconductor Science and Technology,2004,19:630. |
[11] | Chiou H D .[J].Journal of the Electrochemical Society,1992,139:1860. |
[12] | Zimmermann H;Falster R .[J].Applied Physics Letters,1992,60(26):3250. |
[13] | Masanori Akatsuka;Nobuyuki Morimoto .[J].Japanese Journal of Applied Physics,2001,40:3055. |
[14] | Yu Xuegong;Yang Deren;Ma Xiangyang et al.[J].Journal of Applied Physics,2002,92(01):188. |
[15] | Cui C;Yang D .[J].Semiconductor Science and Technology,2004,19:548. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%