采用微波和传统烧结工艺制备了ZnO压敏电阻,比较了微波和传统烧结ZnO压敏电阻的相组成、表面微观结构和电性能,探讨了烧结温度和保温时间对微波烧结样品的致密化和电性能的影响.与传统工艺相比,微波烧结工艺明显改善了ZnO压敏电阻的致密化行为,缩短了烧结周期,改善了电性能.优化的微波烧结样品的压敏电压U1mA为521.8V,非线性系数α是61.4,漏电流IL为1.25×10-6A,残压比Kr为1.45,通流量Im达11600A,均达到或超过了传统工艺水平.微波烧结样品的通流量Im更是比传统烧结样品高约50%.
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