采用微波和传统烧结工艺制备了ZnO压敏电阻,比较了微波和传统烧结ZnO压敏电阻的相组成、表面微观结构和电性能,探讨了烧结温度和保温时间对微波烧结样品的致密化和电性能的影响.与传统工艺相比,微波烧结工艺明显改善了ZnO压敏电阻的致密化行为,缩短了烧结周期,改善了电性能.优化的微波烧结样品的压敏电压U1mA为521.8V,非线性系数α是61.4,漏电流IL为1.25×10-6A,残压比Kr为1.45,通流量Im达11600A,均达到或超过了传统工艺水平.微波烧结样品的通流量Im更是比传统烧结样品高约50%.
参考文献
| [1] | Sutton Willard H .Microwave Processing of Ceramic Materials[J].Ceramic Bulletin,1989,68:376-385. |
| [2] | Clarke David R. .Varistor Ceramics[J].Journal of the American Ceramic Society,1999(1/3):485-502. |
| [3] | Chen Chang-Shun;Cheng-Tzu Kuo;I-Nan Lin .Electrical Properties of ZnO Varistors Prepared by Microwave Sintering Process[J].Japanese Journal of Applied Physics,1996,35:4696-4703. |
| [4] | WAN-CHUI LEE;KUO-SHUNG LIU;I-NAN LIN .Nonlinear electrical properties of ZnO varistors fast-fired by using millimeter-wave sintering process[J].Journal of Materials Science,2000(19):4841-4847. |
| [5] | 康雪雅;常爱民;韩英 等.ZnO压敏陶瓷的微波烧结[J].无机材料学报,1998,13(05):751-754. |
| [6] | 陈志清;谢恒坤.氧化锌压敏瓷及其在电力系统中的应用[M].北京:水利电力出版社,1992:97-143. |
| [7] | Shengtao Li;Feng Xie;Fuyi Liu .The relation between residual voltage ratio and microstructural parameters of ZnO varistors[J].Materials Letters,2005(2/3):302-307. |
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