SnO2-x薄膜非化学计量比对气敏性能的影响

材料科学与工程学报, 2007, 25(1): 22-51. doi: 10.3969/j.issn.1673-2812.2007.01.006

SnO2-x薄膜非化学计量比对气敏性能的影响

王磊 ^1, , 杜军 ^2, , 毛昌辉 ^3, , 杨志民 ^4, , 熊玉华 ^5,

1.北京有色金属研究总院先进电子材料研究所,北京,100088

2.北京有色金属研究总院先进电子材料研究所,北京,100088

3.北京有色金属研究总院先进电子材料研究所,北京,100088

4.北京有色金属研究总院先进电子材料研究所,北京,100088

5.北京有色金属研究总院先进电子材料研究所,北京,100088

基金项目: 北京有色金属研究总院技术创新基金(C-04-3-82248)

关键词： SnO2薄膜 , 氧分压 , 非化学计量比 , 反应磁控溅射

Influences of Nonstoichiometric Ratio on the Gas-Sensing Properties of SnO2-x Thin Films

采用反应磁控溅射法制备SnO2薄膜经常出现化学计量比的失衡问题.通过控制溅射过程中的氧分压制备不同化学计量比的SnO2-x薄膜,研究非化学计量比对薄膜结构、成分以及气敏性能的影响.XRD结果表明氧分压对材料结构和取向的影响非常显著.薄膜的O/Sn和表面化学成分通过XPS进行确定,分析发现氧分压的增加促使薄膜接近化学计量比,但表面化学吸附氧含量在0.33Pa氧分压下达到最大.气敏性能测试表明,非化学计量比主要影响薄膜表面的化学吸附氧数量,从而影响导电性和气体敏感性.氧分压对薄膜化学吸附氧的影响趋势与对气敏性能的影响趋势一致.0.33Pa氧分压下制备的薄膜拥有最多的表面吸附氧,同时对氢气的灵敏度高达45.6%.另外,在0.2～0.5Pa氧分压下制备的薄膜对氢气具有较好的选择性.

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