基于Al2O3掺杂量为3wt%的氧化锌铝陶瓷靶材,采用直流无反应磁控溅射法在载玻片衬底上制备了ZnO:Al透明导电薄膜.研究了氩气压强对薄膜微观结构和光电性能的影响.结果表明:氩气压强对薄膜的平均透光率影响微小,其值均在86%以上,但对薄膜的微观结构和方块电阻有非常明显的影响.随着氩气压强的增大,薄膜的晶粒形状由片状向球状变化,并呈现出c轴择优生长特性.氩气压强在0.6～3.0 Pa范围内增长时,薄膜的方块电阻先缓慢减小,2.0Pa后急剧增大.在压强为1.5Pa时,薄膜具有最好的电学性能,其电阻率为1.4×10-3Ω·cm,方块电阻为10Ω/sq,优值为1.6Ω-1,符合评价标准.
参考文献
| [1] | (O)zgür (U);Alivov Y I;Liu C et al.A comprehensive review of ZnO materials and devices[J].Applied Physics,2005,98(041301):1-103. |
| [2] | S. J. Pearton;D. P. Norton;K. Ip;Y. W. Heo;T. Steiner .Recent progress in processing and properties of ZnO[J].Progress in materials science,2005(3):293-340. |
| [3] | Tadatsugu Minami .New n-Type Transparent Conducting Oxides[J].MRS bulletin,2000(8):38-44. |
| [4] | Nakanishi Yoichiro;Kominami Hiroko;Aoki Toru;Hatanaka Yoshinori;Shimaoka Goro;Miyake Aki .Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1999(1):233-236. |
| [5] | K. Ellmer;R. Cebulla;R. Wendt .Transparent and conducting ZnO(:Al) films deposited by simultaneous RF- and DC-excitation of a magnetron[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):413-416. |
| [6] | Guojia Fang;Dejie Li;Bao-Lun Yao .Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl_2O_4) ceramic target[J].Journal of Crystal Growth,2003(3/4):393-400. |
| [7] | Martin A.;Espinos JP.;Justo A.;Holgado JP.;Yubero F.;Gonzalez-Elipe AR. .Preparation of transparent and conductive Al-doped ZnO thin films by ECR plasma enhanced CVD[J].Surface & Coatings Technology,2002(0):289-293. |
| [8] | Kim H.;Horwitz JS.;Qadri SB.;Chrisey DB. .Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):107-111. |
| [9] | M. J. Alam;D. C. Cameron .Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol-gel process[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2001(4PII):1642-1646. |
| [10] | Gomez H;Maldonado A;Olvera MDLL;Acosta DR .Gallium-doped ZnO thin films deposited by chemical spray[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2005(1/4):107-116. |
| [11] | Igasaki Y.;Kanma H. .Argon gas pressure dependence of the properties of transparent conducting ZnO : Al films deposited on glass substrates[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(0):508-511. |
| [12] | 苏伟涛,余志明,刘昕,杨莉.压强对射频溅射氧化锌薄膜结构和性能的影响[J].湖南有色金属,2004(02):24-26,55. |
| [13] | Hu J;Gordan R G .Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition[J].Applied Physics,1992,71(02):880-890. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%