在玻璃衬底上通过瞬间蒸发法沉积了厚度为50-400nm的N型Bi2.5Se0.5热电薄膜,沉积温度为473K.采用XRD、EDXA和FESEM技术分别对薄膜的相结构、组成和表面形貌进行了分析研究,在300-350K的温度范围内,研究了薄膜的电阻率与膜厚和温度的相互关系.
N-type Bi2Te2.5 Se0.5 thermoelectric thin films with thickness in the range 50-400nm have been deposited by flash evaporation method on glass substrates at 473K. The structure, composition and morphology of the deposited thin films were carried out by Xray diffraction (XRD), energy-dispersive X-ray analysis (EDXA) and field emission scanning electron microscope (FE-SEM) respectively.The thickness and temperature dependence of electrical resistivity of the thin films were studied in the temperature range 300-350K.
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