开展了飞秒激光对GaAs太阳能电池表面辐照损伤的试验研究。研究结果表明，在能量密度＞02．7 J／cm2时，飞秒激光对GaAs太阳能电池表面开始造成损伤，其损伤程度随着激光能量密度的增加而增加；在相同激光能量密度的条件下，其损伤程度随着扫描速度的增加而减小。采用光学显微镜对其表面损伤形貌进行分析发现，其烧蚀面积随着激光能量密度的增大而不断增大，这是因为飞秒激光的光斑能量成高斯型分布。根据烧蚀区域光斑直径与脉冲能量的关系，对GaAs太阳能电池表层 TiO2／SiO2薄膜的损伤阈值进行了理论计算，其阈值为03．5 J／cm2大于实验测试结果02．7 J／cm2。这可能是由于理论计算中对激光光斑模式的简化以及材料特性均化处理等不确定度因素影响的结果。
Femtosecond laser ablation of the surface on GaAs solar cell has been investigated .The research re‐sults indicated that femtosecond laser irradiation start to cause damage to the GaAs solar cell surface at the pulse fluence of 0 2.7 J/cm2 ,and the injury degree increase with the increase of laser fluence or the decrease of scanning speed .The ablated surface were characterized by optical microscopy ,found that the ablation area ex‐panding with increasing laser fluences ,which was due to the Gauss distribution of femtosecond laser energy . The abaltion threshold of the TiO2/SiO2 films of GaAs solar cell surface was obtained from the linear fit of the dependence of the square diameter of the ablated area with the natural logarithm of the laser pulse energy ,the resulting threshold of the laser fluence was about 0 3.5 J/cm2 ,which was greater than the test result 0 2.7 J/cm2 . The certain numerical difference might be due to the simplified theoretical calculation of laser spot pattern and the uncertainty factors of material .
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