材料期刊网

用离子注入技术实现了Al表面C元素的掺杂, 并利用XPS, XRD, TEM和SEM研究了C掺杂对Al中离子
注入He行为的影响. 结果表明, 掺杂的C在Al表面形成了Al₄C₃, 随着C掺杂量的增加, Al表面组织的择优取向
和晶胞体积发生改变, 从而影响了Al中的He离子注入行为. 预先掺杂的C对He离子注入Al表面的鼓泡行为有重
要影响, 其影响程度与掺杂剂量有关. 小剂量C掺杂后, 能有效抑制鼓泡的长大, 并使Al表面鼓泡均匀分布; 更高
剂量C掺杂后, C对表面鼓泡的抑制作用减弱, 甚至加剧He离子的辐照损伤, Al表面出现孔洞和剥落现象. 掺杂的
C对Al基体的微观结构也有很大影响.

It has been verified that He embrittlement in metals could be suppressed by proper additions of alloying elements, and this effect is related to highly dispersive secondary phase precipitated in the matrix. Effect of C doping on ion implantated He behavior in Al has been investigated by XPS, XRD, TEM and SEM. It was found that the secondary phase precipitated in the surface of Al doped with C is Al₄C₃. With the increase of the dose of C, the volume of Al unit cell increased, and the preferred orientation of Al surface changed from (100 to (111), which will affect the He behavior in Al. The pre-doped C played an important role in the Al surface blistering induced by He ion implantation, and the extent is dependent on the dose of pre-doped C. When the Al sample was pre-doped by C with smaller fluence (≦5.0×10²⁰ ions/m²), the growth of blisterings is suppressed effectively, and the surface blisterings are distributed more uniformly. However, when pre-doped C has larger fluence (≧1.0×10²¹ ions/m²), the suppression effect of C on surface blistering would be reduced, and even the irradiation damage of He ions (voids and flakings) would appear in the surface. The effect of C doping on the microstructure in Al was also observed.