采用直流电解沉积技术,制备出具有高密度择优取向的纳米孪晶结构块体Cu样品.样品由微米级柱状晶粒构成,晶粒内有高密度的平行于生长基面的共格孪晶界面.研究发现,电流密度对于纳米孪晶Cu的晶粒尺寸有明显影响,但对其织构和孪晶片层厚度影响不大.当电流密度从10 mA/cm2增加到30 mA/cm2,纳米孪晶Cu的平均晶粒尺寸从10.1 μm减小到4.2 μm,孪晶片层厚度为30-50 nm.其原因是随电流密度的增加,阴极的过电位增大,从而使晶粒细化.
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