采用HF/HNO3溶液化学腐蚀,在硅片上制备减反射效果优良的多孔硅太阳电池减反射膜,借助原子力显微镜(AFM)和X光电子谱(XPS)对其表面形貌和成分进行观察,发现该膜与电化学阳极腐蚀得到的多孔硅具有相似性,其主要成分为非化学配比的硅的氧化物SiOx(X＜2).采用带积分球的光度分光计,测得形成多孔硅减反射膜后,硅片表面反射率大大下降,,在波长330～800nm范围反射率只有1.5～2.9%.研究指出这种强减反射作用,与多孔硅具有合适的折射率及其多孔特性的光陷阱作用有关.
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