在微波等离子体化学气相沉积装置中,采用正交试验法研究金刚石在镜面抛光的Si(100)面上的偏压形核过程中,形核时间、偏压电压、气压及甲烷浓度对形核密度的影响,研究结果表明:形核密度随形核时间的增加而增加,适中的偏压电压和沉积气压有利于金刚石的形核,而甲烷浓度的影响很小.正交试验所得的最佳形核条件为偏压-150V;时间12min;气压4kPa;CH4比率5%,在该条件下金刚石的形核密度达到1010个/cm2.
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