B掺杂CoSi的微观组织和单晶热电性能

中国有色金属学报, 2004, 14(12): 2055-2059.

B掺杂CoSi的微观组织和单晶热电性能

周扬 ^1, , 李成川 ^2, , 任维丽 ^3, , 张澜庭 ^4, , 吴建生 ^5,

1.上海交通大学,材料科学与工程学院,教育部高温材料及测试开放实验室,上海,200030

2.上海交通大学,材料科学与工程学院,教育部高温材料及测试开放实验室,上海,200030

3.上海交通大学,材料科学与工程学院,教育部高温材料及测试开放实验室,上海,200030

4.上海交通大学,材料科学与工程学院,教育部高温材料及测试开放实验室,上海,200030

5.上海交通大学,材料科学与工程学院,教育部高温材料及测试开放实验室,上海,200030

基金项目: 上海市应用材料研究与发展基金(0137) 国家自然科学基金(50131030)

关键词： B , 固溶 , 晶格常数 , CoSi单晶 , 热电性能

Microstructure and single crystal's thermoelectric performance of B-doped CoSi

研究了掺杂B后CoSi化合物的微观组织及单晶的热电性能.结果表明:B在CoSi中的最大固溶度为0.4%(摩尔分数),CoSi化合物的晶格常数随着B含量的增加线性减小,当B含量达到其最大固溶度时晶格常数不再变化;电弧熔炼制备的CoSi1-xBx材料具有很多空洞和裂纹,单晶试样大大减少了组织上的缺陷;掺杂B后CoSi0.995B0.005单晶仍为N型传导,Seebeck系数的绝对值增加,电阻率下降,热导率升高;掺杂B后热电优值(ZT)增加.

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