硅是目前已知的理论比容量最高的锂离子电池负极材料,但是循环性能较差.本文通过射频磁控溅射的方法,成功合成出了NiSix/Si/Ge核壳纳米棒阵列,并通过扫描电子显微镜(SEM)和能量色散X射线光谱仪(EDX)对其形貌和成分进行了表征.将原位生长的NiSiJSi/Ge核壳纳米棒阵列直接作为工作电极,组装成纽扣半电池进行电化学和循环性能测试,NiSix/Si/Ge核壳纳米棒阵列的首次放电容量达到了2000mAhg-1左右,首次效率在70％左右,并且在100个循环以后仍保有初始可逆容量的30％以上.相比NiSix/Si纳米棒阵列,NiSix/Si/Ge核壳纳米棒阵列的循环性能明显得到了提升,说明锗的包覆对硅的锂离子电池性能改进起到了非常重要的作用.
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