测试了采用熔体法通过使用异质同构的Pb(Mg1/3Nb2/3)O3-PbTiO3籽晶生长出的Pb(In1/2Nb1/2)O3-PbTiO3单晶的铁电、压电性能的温度稳定性,研究结果发现,<001>取向的PIN—PT单晶不但具有非常优越的铁电、压电性能,其室温电容率ε达5000左右,介电损耗因子tgδ-1％,k33值最大可达到95％,d33值最大可达到3000pC/N左右.而且具有很高的温度稳定性,即使测试温度超过150℃,k33值也只下降不到10％.研究结果表明,该晶体是继PMN-PT和PZN—PT单晶之后又一种非常具有发展前途的单晶.
Temperature dependence of dielectric, piezoelectric properties and polarization vs E-field curves of Pb(In1/2Nb1/2)O3-PbTiO3 single crystal grown
directly from melt by the modified Bridgman technique with an allomeric Pb(Mg1/3Nb2/3)O3-PbTiO3 seed crystal was investigated. For <001>
poled crystals, the permittivity εr and the dielectric loss tangent tgδ are 5000 and 1% respectively. For T<100℃, the value
of k33 is relatively temperature independent, with a value between 0.9 to 0.95, even at 150℃, the value of k33 decreases by only 10%. The
value of d33 reaches up to a maximum of 3000 pC/N at about 80℃, and has a value of 850 pC/N at 150℃. The results obtained show that
(1-x)Pb(In1/2Nb1/2)O3-xPbTiO3 single crystals are promising for a wide range of electromechanical transducer applications.
参考文献
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