采用离子束溅射技术生长了一系列Ge/Si多层膜,研究了沉积温度和生长停顿对Ge/Si多层膜结晶性和界面结构的影响.通过对Raman峰峰位、峰强度比值和X射线小角衍射等方面的研究,发现综合控制沉积温度和生长停顿能够得到结晶性和界面都相对理想的多层膜.这为改善Ge/Si多层膜的离子束溅射生长提供了一种有效的方法.
参考文献
| [1] | Buljan M;Desnica U V;Ivanda M et al.Formation of Three-dimensional Quantum-dot Superlattices in Amorphous System:Experiment and Monte Carlo Simulations[J].Physical Review B:Condensed Matter,2009,79:035310-035311. |
| [2] | Chong TC;Shi LP;Wei XQ;Zhao R;Lee HK;Yang P;Du AY .Crystalline amorphous semiconductor superlattice[J].Physical review letters,2008(13):136101-1-136101-4-0. |
| [3] | J(a)rrendahl K;Dulea M;Birch J et al.X-ray Diffraction from Amorphous Ge/Si Cantor Superlattices[J].Physical Review B:Condensed Matter,1995,51:7621-7631. |
| [4] | Z. M. Jiang;C. W. Pei;X. F. Zhou .Study of strain in partially relaxed Ge epilayers on Si(100) substrate[J].Applied physics letters,1999(3):370-372. |
| [5] | 陈寒娴;杨瑞东;邓荣斌 等.离子束溅射Si/Ge多层膜的界面结构研究[J].功能材料,2007,38:4075-4077. |
| [6] | 欧阳煙,王茺,杨杰,夏中高,薄锐,杨宇.缓冲层厚度对Ge/Si多层膜的影响[J].人工晶体学报,2009(04):902-907. |
| [7] | Sasaki K;Takahashi Y;Ikeda T .Fabrication of Silicon/Germanium Uperlattice by Ion-beam Sputtering[J].Vacuum,2002,66:457-462. |
| [8] | Au V;Charles C;Boswell R W .Interface Creation and Stress Dynamics in Plasma-deposited Silicon Dioxide Flms[J].Applied Physics Letters,2006,88:234103-234103. |
| [9] | L. Jiang;L.S. Tan;J.Z. Ruan;W.Z. Yuan;X.P. LiC;Z.J. Zhao .Intermittent deposition and interface formation on the microstructure and magnetic properties of NiFe/Cu composite wires[J].Physica, B. Condensed Matter,2008(18):3054-3058. |
| [10] | 宋禹忻,俞重远,刘玉敏.沉积速率和生长停顿对InAs/GaAs量子点超晶格生长影响的综合分析[J].物理学报,2008(04):2399-2403. |
| [11] | 周湘萍 .Ge/Si多层膜的热稳定性研究[D].云南大学,2001. |
| [12] | 盛箎;蒋最敏;陆昉.硅锗超晶格及低维量子结构[M].上海:上海科学技术出版社,2004 |
| [13] | Xia G R;Olubuyide O O;Hoyt J L .Strain Dependence pf Si-Ge Interdifuusion in Epitaxial Si/Si1-yGey/Si Heterostructures on Relaxed Si1-xGex Substrates[J].Applied Physics Letters,2006,88:013507-013503. |
| [14] | Sheng C.;Cai Q.;DAWEIGONG.;Yu MR.;Zhang XJ.;Wang X.;Zhou TC. .SUPPRESSION OF SI-GE INTERFACIAL VIBRATION MODE IN THE RAMAN SPECTRUM OF A SI6GE4 SUPERLATTICE[J].Physical Review.B.Condensed Matter,1996(16):10771-10774. |
| [15] | J.I. Martin;J. Nogues;Kai Liu .Ordered magnetic nanostructures: fabrication and properties[J].Journal of Magnetism and Magnetic Materials,2003(1/3):449-501. |
| [16] | 朱天伟,徐波,何军,赵凤瑷,张春玲,谢二庆,刘峰奇,王占国.InAs/GaAs柱形岛的制备及特性研究[J].物理学报,2004(01):301-305. |
| [17] | 王杏华,郑厚植,余涛,Reino Laiho.GaAs/AlGaAs 单量子阱中界面粗糙度散射[J].半导体学报,1994(05):329. |
| [18] | 何为,郝智彪,罗毅.GaAs图形衬底上InAs量子点生长停顿的动力学蒙特卡罗模拟[J].半导体学报,2005(04):707-710. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%