室温下通过直流磁控溅射Al2O3掺杂3％(质量分数)的ZnO靶材制备了厚度约1μm、结晶度高、表面平整光滑的ZnO∶Al透明导电薄膜.研究盐酸、王水和草酸溶液对ZnO∶Al薄膜的湿化学刻蚀行为,分析刻蚀对薄膜微观结构、光刻图案、电学和光学性能的影响.结果表明,刻蚀对薄膜的结晶取向性无影响；经盐酸、王水和草酸刻蚀后薄膜的电阻率略有增大,从7.4mΩ·cm分别增大到8.7mnΩ· cm、8.8mQ·cm和8.6mΩ·cm；透光率略有下降,从80％分别下降到76％、77％和78％.0.5％的盐酸刻蚀可以获得结构良好的陷光结构.薄膜在盐酸中刻蚀速率快,易产生浮胶；在草酸中刻蚀图案清晰,但存在残留；在王水中刻蚀图案清晰且无残留.
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