由聚硅氧烷裂解制备出Si-O-C陶瓷,其电阻率为2220 Ω·cm.在聚硅氧烷中添加Al和MoSi2可以制备出低电阻率的Al/Si-O-C和MoSi2/Si-O-C陶瓷.制备温度对材料电阻率有很大的影响.
参考文献
| [1] | Renlund G M;Prochazka S;Doremus R H .[J].Journal of Materials Research,1991,6(12):2723. |
| [2] | Mucalo MR.;Brown IWM.;Milestone NB. .NMR AND X-RAY DIFFRACTION STUDIES OF AMORPHOUS AND CRYSTALLIZED PYROLYSIS RESIDUES FROM PRE-CERAMIC POLYMERS[J].Journal of Materials Science,1997(9):2433-2444. |
| [3] | 马青松,陈朝辉,郑文伟,胡海峰.聚硅氧烷/二乙烯基苯的交联与裂解[J].国防科技大学学报,2001(05):40-44. |
| [4] | Cordelair J;Greil P .[J].Journal of the European Ceramic Society,2000,20:1947. |
| [5] | Monthioux M;Delverdier O .[J].Journal of the European Ceramic Society,1996,16:721. |
| [6] | Cordelair J .Electrical Properties of Polymer/Filler Derived Ceramics[D].Erlangen,Germany:University of Erlangen-Nuernberg,1999. |
| [7] | Cordelair J;Greil P .[J].Journal of the American Ceramic Society,2001,84(10):2256. |
| [8] | 王刚,赵世柯,江莞.用复合组织设计来改善二硅化钼材的低温抗氧化性能的设想[J].陶瓷学报,2002(03):156-159. |
| [9] | Erny T .Manufacturing and Properties of Composite Ceramics Derived from MoSi2 Loaded Polysiloxanes[D].Hamburg,Germany:University of Hamburg-Harburg,1996. |
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