采用直流磁控溅射的方法，分别在Si（111）和玻璃基片上沉积A1N薄膜．利用X射线衍射仪、X射线能谱仪、台阶仪、原子力显微镜、分光光度计和傅里叶变换红外光谱仪等分析薄膜的结构、组分、膜厚、形貌和光学性能．实验得到的样品为多晶六方相AlN，膜厚为720nm，含有少量的氧杂质．对A1N薄膜的光学性能的研究表明，样品在250-1000nm波长范围内具有较高的透过率；红外吸收谱以672cm。为中心形成一个很宽的红外吸收带；薄膜的禁带宽度约为5．94eV．
AlN thin films were prepared by IX; magnetron reactive sputtering on Si(111) and glass substrates. The properties of microstrueture, component, thickness, morphology and optics of AlN thin films were investigated by X-ray diffraction diffractometer, X-ray EDS, step profilometer, atomic force microscope, spectrophotometer and fourier-transform infrared spectrometer. The obtained samples are polycrystalline hexagonal A1N, the thickness of the samples is 720nm and it has little oxygen impurity in the samples. The optical properties of the A1N thin films were also investigated. The results show that the A1N samples have high transmission in the wave length range of 250-1000nm, there is an intensive and board band centered at 672cm-1 in its Fourier transformation infrared spectra and its ban&gap value is 5. 94eV.
参考文献
| [1] | 张亚黎,王惠龄,庄汉锐,饶荣水,许昕睿.高导热高电绝缘AlN的微结构及低温热特性分析[J].低温物理学报,2003(02):132-136. |
| [2] | 乔保卫,刘正堂,李阳平.工艺参数对磁控反应溅射AlN薄膜沉积速率的影响[J].西北工业大学学报,2004(02):260-263. |
| [3] | Jacquot A.;Lenoir B.;Dauscher A.;Verardi P.;Craciun F.;Stolzer M. Gartner M.;Dinescu M. .Optical and thermal characterization of AlN thin films deposited by pulsed laser deposition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):507-512. |
| [4] | 周继承,石之杰.AlN电子薄膜材料的研究进展[J].材料导报,2007(05):14-16,24. |
| [5] | Venkataraj S;Severin D;Drese R;Koerfer F;Wuttig M .Structural, optical and mechanical properties of aluminium nitride films prepared by reactive DC magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):235-239. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%