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对镁合金等离子体电解氧化膜的表面制备工艺进行了研究.采用正交设计法优化实验方案,对最佳工艺条件下制备的氧化膜的微观形貌、相组成进行了研究;采用点滴腐蚀、动电位极化曲线、循环阳极极化曲线、电化学阻抗谱及浸泡腐蚀试验对AZ31镁合金及等离子体电解氧化膜的耐腐蚀性能进行了综合评价.结果表明,制备的等离子体电解氧化膜的最佳工艺为KOH 4g/L、硅酸盐20 g/L、氧化电压300 V、氧化时间30 min;氧化膜主要成分为MgSiO3和Mg2SiO4,经过等离子体电解氧化之后其显微硬度、耐点滴腐蚀、耐均匀腐蚀和耐点腐蚀性能较AZ31镁合金均有较大提高.

参考文献

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