纳米SiO2是一种性能优越的功能材料,化学机械抛光(CMP)过程的精确控制在很大程度上取决于对纳米SiO2功能的认识.但是目前对碱性纳米SiO2在CMP过程中的功能还没有完全弄清楚,探讨它在CMP中作用是提高CMP技术水平的前提.纳米SiO2溶胶的表面效应使其表面存在大量的羟基,在CMP过程中纳米SiO2表面羟基与碱反应生成硅酸负离子,硅酸负离子再与硅反应来降低纳米SiO2的表面能量,同时达到除去硅的目的.综上所述,碱性纳米SiO2在CMP的过程中不仅起到了磨料的作用,同时参加了化学反应,在此基础上提出了在碱性条件下纳米SiO2与硅的反应机理.
参考文献
| [1] | Su J X;Guo D M;Kang R K et al.[J].Materials Science Forum,2004,471-472:26-31. |
| [2] | Su Jianxiu;Guo Dongming et al.[J].Chinese Journal of Semiconductors,2005,26(03):606-612. |
| [3] | Zantye P B;Kumar A;Sikder A K .[J].Materials Science and Engineering,2004,45(3-6):89-220. |
| [4] | Turner D R .[J].Journal of the Electrochemical Society,1958,195:402-408. |
| [5] | Memming R;Schwandt G .[J].Surface Science,1966,4:109-116. |
| [6] | Liu Yuling;Zhang Kailiang;Wang Fang.Investigation on the Final Polishing Liquid and Technique of Silicon Substrate in ULSI[A].陕西西安,2002:500. |
| [7] | Luo Jianfeng;Domfeld D A .[J].Transactions on Semiconductor Manufacturing,2001,14(02):112-133. |
| [8] | 牛新环;王胜利 等.[J].功能材料,2006,2:336-338. |
| [9] | Graf D;Schnegg A;Schmolke R et al.[J].Electrochemical Society Proceedings,2000,96-22:186-196. |
| [10] | 汪斌华,黄婉霞,刘雪峰,涂铭旌.纳米SiO2的光学特性研究[J].材料科学与工程学报,2003(04):514-517. |
| [11] | Li XH;Cao Z;Zhang ZJ;Dang HX .Surface-modification in situ of nano-SiO2 and its structure and tribological properties[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(22):7856-7861. |
| [12] | Spange S. .Silica surface modification by cationic polymerization and carbenium intermediates [Review][J].Progress in Polymer Science,2000(6):781-849. |
| [13] | 许并社.纳米材料及应用技术[M].北京:化学工业出版社,2004:14-16. |
| [14] | Ahn Yoomin;Yoon J Y;Baek C W et al.[J].Wear,2004,257:785-789. |
| [15] | Du Tianbao;Tamboli D;Luo Ying et al.[J].Applied Surface Science,2004,229:167-174. |
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