SiNx:H薄膜因为具有良好的减反射性质和钝化作用,在晶体硅太阳电池(单晶硅、多晶硅)的研究和生产中得到越来越广泛的应用.介绍了SiNx:H薄膜在硅基太阳电池中的减反射和钝化作用,主要制备方法等研究现状,以及面临的问题和今后的研究趋势.
参考文献
[1] | Kerr M J .Surface,emitter and bulk recombination in silicon and development of silicon nitride passivated solar cells[D].Canberra: Australian National University Press,2002. |
[2] | 王晓泉,杨德仁,席珍强.多晶硅太阳电池用SiN薄膜的研究进展[J].材料导报,2002(03):23-25. |
[3] | 李艳 .太阳电池上PECVD氮化硅膜的减反射和钝化作用研究[D].北京师范大学,2003. |
[4] | Schmidt J;Aberle A G .Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition[J].Journal of Applied Physics,1999,85(07):3626. |
[5] | Aberle AG. .Overview on SiN surface passivation of crystalline silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):239-248. |
[6] | 赵慧 .氮化硅薄膜以及磷铝吸杂在多晶硅太阳电池上的应用研究[D].北京交通大学,2004. |
[7] | Gtunz S W;Dicker J;Kray D.High-efficiency cell structures for medium quality silicon[A].,2001:1299. |
[8] | Moshner J D;Henze J;Schmidt J et al.High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system[J].Progress in Photovoltaics:Research and Applications,2004,12:21. |
[9] | Wolke W;Catoir J;Liu J.Sutrace passivation for solar cells by large scale inline sputtering of silicon nitride[A].,2005 |
[10] | Aicherge S yon;Schmela M.For deposit only:Market survey on SiNx deposition systems[J].International Journal of Photoenergy,2005(03):58. |
[11] | 张化福,祁康成,吴健.氮化硅薄膜的制备方法及主要应用[J].材料导报,2004(z2):298-300,297. |
[12] | Sarita T;Satake T;Adachi H et al.Mass spectrometric and kinetic study of low pressure chemical vapor deposition of Si3 N4 thin films from SiH2 Cl2 and NH3[J].Journal of the Electrochemical Society,1994,29(04):3505. |
[13] | Zambom L S;Mansano R D;Fuflan R et al.LPCVD deposition of silicon nitride assisted by high density plasma[J].Thin Solid Films,1999,343-344:299. |
[14] | Mihailescu IN.;Teodorescu VS.;Luches A.;Martino M.;Perrone A. Gartner M.;Lita A. .PULSED LASER DEPOSITION OF SILICON NITRIDE THIN FILMS BY LASER ABLATION OF A SI TARGET IN LOW PRESSURE AMMONIA[J].Journal of Materials Science,1996(11):2839-2847. |
[15] | 余京松,马青松,葛曼珍,杨辉,江仲华.氮化硅薄膜的制备技术[J].中国陶瓷工业,1999(01):20-22. |
[16] | Yamamoto S;Migitaka M .Total pressure effects on the properties of silicon nitride films fabricated by photoenhanced chemical vapor deposition[J].Journal of Applied Physics,1994,33(9A):5005. |
[17] | Rathi V K;Gupta M;Thangaraj R et al.Photo-processing of silicon nitride[J].Thin Solid Films,1995,266(02):219. |
[18] | 陈东 .用PECVD法沉积的氮化硅减反射膜对太阳电池的影响[D].上海交通大学,2003. |
[19] | W. SOPPE;H. RIEFFE;A. WEEBER .Bulk and Surface Passivation of Silicon Solar Cells Accomplished by Silicon Nitride Deposited on Industrial Scale by Microwave PECVD[J].Progress in photovoltaics,2005(7):551-569. |
[20] | Aberle A G;Hezel R .Progress in Low-temperature Surface Passivation of Silicon Solar Cells using remote-plasma Silicon Nitride[J].Progress in Photovoltaics:Research and Applications,1998,5(01):29. |
[21] | Lenkeit B.;Artuso F.;Hezel R.;Steckemetz S. .Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):317-323. |
[22] | van der Werf CHM;Goldbach HD;Loffler J;Scarfo A;Kylner AMC;Stannowski B;ArnoldBik WM;Weeber A;Rieffe H;Soppe WJ .Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multi crystalline silicon solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):51-54. |
[23] | 王辉,宋航,金亿鑫,蒋红,缪国庆.HFCVD法制备纳米晶态SiC及其室温下的光致发光[J].发光学报,2004(06):721-724. |
[24] | Nelson B;Iwaniczko E;Mahan A et al.High-deposition rate a-Si:H n-i-p solar cells grown by HWCVD[J].Thin Solid Films,2001,395:292. |
[25] | Vrlaan V;Houweling Z S .Reaction mechanism for deposition of silicon nitride by hot-wire CVD with ultra high deposition rate[OL].http://www.mrs.org/s_mrs,2006. |
[26] | Holt J K.Hot-wire chemical vapor deposition of high hydrogen content silicon nitride for silicon solar cell passivation and anti-reflection coating applications[A].,2003 |
[27] | Ledermann A;Weber U;Mukherjee C et al.Influence of gas supply and filament geometry on the large-area deposition of amorphous silicon by hot-wire CVD[J].Thin Solid Films,2001,395(1-2):61. |
[28] | Keiji Ishibashi .Development of the Cat-CVD apparatus and its feasibility for mass production[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1/2):55-60. |
[29] | Lauinger T;Aberle A G;Hezel R.Comparison of directed and remote PECVD silicon nitride films for low temperature surface passivation of p-type crystalline silicon[A].,1997:853. |
[30] | Yelundur V;Rohatgi A;Hanoka J I.Beneficial impact of low frequency PECVD SiNx:H induced hydrogenation in high efficiency string ribbon silicon solar cells[A].,2004:951. |
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