Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEC GaAs as a composite

稀有金属（英文版）, 2003, 22(3): 179-184.

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1.Hebei University of Technology, Tianjin 300130, China

2.Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

3.Hebei University of Technology, Tianjin 300130, China

4.Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

5.Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

6.Hebei University of Technology, Tianjin 300130, China

基金项目: 国家自然科学基金(02380411) 河北省自然科学基金(601048)

Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEC GaAs as a composite

Keywords： semiconductor material

Undoped (ND) semi-insulating (SI) liquid encapsulated Czochralski (LEC) GaAs crystals were investigated by photocurrent and temperature-dependent Hall measurements. It is indicated that strong nonuniformities in the distributions of impurities and defects can occur for the NDSILEC GaAs crystal grown under a condition with strong constitutional supercooling. In such case, the deep level that dominates Fermi level is spacial location dependent, and the GaAs crystal becomes a composite consisting of a large number of elementary domains with different conductivities. The sub-bandgap photocurrent response and the carrier transport properties for this kind of composite are quite different from those for homogeneous NDSILEC GaAs.

参考文献

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Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEC GaAs as a composite

参考文献