综述了近十年来低介电常数含氟氧化硅薄膜的研究状况,详细介绍了该薄膜在化学键结构、热性质、湿稳定性以及介电常数四个方面的特性,同时也简单介绍了薄膜的台阶覆盖度、填隙能力和漏电流特性,指出含氟氧化硅薄膜是一种可用于集成电路中的极富应用前景的低介电常数材料.
参考文献
| [1] | List R S;Singh Abha;Ralston Andrew et al.[J].MRS Bulletin,1997,22(10):61-69. |
| [2] | Laxman R K.[J].Semiconductor International,1995:71-74. |
| [3] | Yoshimaru M;Koizumi S;Shimokawa K .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1997,15(06):2908-2914. |
| [4] | Han S M;Aydil E S .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1997,15(06):2893-2904. |
| [5] | Yun S M;Chang H Y;Lee K M et al.[J].Journal of the Electrochemical Society,1998,145(07):2576-2580. |
| [6] | Usami T;Shimokawa K;Yoshimaru M .[J].Japanese Journal of Applied Physics,1994,33(1B):408-412. |
| [7] | Lee S;Park J W .[J].Materials Chemistry and Physics,1998,53:150-154. |
| [8] | Pankov V.;Ortiz A.;Alonso JC. .The effect of hydrogen addition on the fluorine doping level of SiOF films prepared by remote plasma-enhanced chemical vapor deposition using SiF4-based plasmas[J].Japanese journal of applied physics,1998(11):6135-6141. |
| [9] | Lim S W;Shimogaki Y;Nakano Y et al.[J].Japanese Journal of Applied Physics,1996,35(2B):1468-1473. |
| [10] | Tamura T.;Inoue Y.;Satoh M.;Yoshitaka H.;Sakai J. .Structural analysis for water absorption of SiOF films prepared by high-density-plasma chemical vapor deposition[J].Japanese journal of applied physics,1998(5A):2411-2415. |
| [11] | Yoshimaru M;Koizumi S;Shimokawa K .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1997,15(06):2915-2921. |
| [12] | Homma T;Murao Y .[J].Journal of the Electrochemical Society,1993,140(12):3599-3603. |
| [13] | Homma T. .CHARACTERISTICS OF SIOF FILMS FORMED USING TETRAETHYLORTHOSILICATE AND FLUOROTRIETHOXYSILANE AT ROOM TEMPERATURE BY CHEMICAL VAPOR DEPOSITION[J].Journal of the Electrochemical Society,1996(2):707-711. |
| [14] | Homma T;Yamaguchi R;Murao Y .[J].Journal of the Electrochemical Society,1993,140(03):687-691. |
| [15] | Lucovsky G.;Yang H. .FLUORINE ATOM INDUCED DECREASES TO THE CONTRIBUTION OF INFRARED VIBRATIONS TO THE STATIC DIELECTRIC CONSTANT OF SI-O-F ALLOY FILMS[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1997(3 Pt.1):836-843. |
| [16] | Homma T. .PROPERTIES OF FLUORINATED SILICON OXIDE FILMS FORMED USING FLUOROTRIETHOXYSILANE FOR INTERLAYER DIELECTRICS IN MULTILEVEL INTERCONNECTIONS[J].Journal of the Electrochemical Society,1996(3):1084-1087. |
| [17] | Ida J.;Yoshimaru M.;Ohtomo A. .Influence of low dielectric SiOF film on metal oxide semiconductor field effect transistor characteristics and its impact on circuit performance[J].Japanese journal of applied physics,1998(11):5843-5848. |
| [18] | Hasegawa S.;Lubguban JA.;Inokuma T.;Kurata Y.;Saito A. .Effects of nitrogen addition to fluorinated silicon dioxide films[J].Japanese journal of applied physics,1998(9A):4904-4909. |
| [19] | Hwang B K;Choi J H;Lee S et al.[J].Japanese Journal of Applied Physics,1996,35(2B):1588-1592. |
| [20] | Yoo W S;Swope R;Mordo D .[J].Japanese Journal of Applied Physics,1997,36(1A):267-275. |
| [21] | Nakasaki Y;Miyajima H;Katsumat R et al.[J].Japanese Journal of Applied Physics,1997,36(04):2533-2544. |
| [22] | Nakasaki Y;Miyajima H;Katsumat R et al.[J].Japanese Journal of Applied Physics,1997,36(04):2545-2554. |
| [23] | Kudo H;Shinohara R;Takeishi S et al.[J].Japanese Journal of Applied Physics,1996,35(2B):1583-1587. |
| [24] | Sawada M;Nakagami Y;Shirafuji T et al.[J].Japanese Journal of Applied Physics,1997,36(7B):4911-4916. |
| [25] | Swope R.;Hsieh J.;Shuchmann S.;Nagy F.;Nijenhuis HT.;Mordo D.;Yoo WS. .IMPROVEMENT OF ADHESION PROPERTIES OF FLUORINATED SILICA GLASS FILMS BY NITROUS OXIDE PLASMA TREATMENT[J].Journal of the Electrochemical Society,1997(7):2559-2564. |
| [26] | Takeishi S.;Shinohara R.;Tsukune A.;Satoh Y.;Harada H. Yamada M.;Kudoh H. .STABILIZING DIELECTRIC CONSTANTS OF FLUORINE-DOPED SIO2 FILMS BY N2O-PLASMA ANNEALING[J].Journal of the Electrochemical Society,1996(1):381-385. |
| [27] | Lee PW.;Verma A.;Tran H.;Nguyen B.;Mizuno S. .DIELECTRIC CONSTANT AND STABILITY OF FLUORINE-DOPED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED SIO2 THIN FILMS[J].Journal of the Electrochemical Society,1996(6):2015-2019. |
| [28] | Han SM.;Aydil ES. .Reasons for lower dielectric constant of fluorinated SiO2 films[J].Journal of Applied Physics,1998(4):2172-2178. |
| [29] | Lim SW.;Nakano Y.;Tada K.;Komiyama H.;Shimogaki Y. .REDUCTION MECHANISM IN THE DIELECTRIC CONSTANT OF FLUORINE-DOPED SILICON DIOXIDE FILM[J].Journal of the Electrochemical Society,1997(7):2531-2537. |
| [30] | Lynn R Allen et al.[J].Applied Physics Letters,1996,68(06):832-834. |
| [31] | Lim S W;Shimogaki Y;Nakano Y et al.[J].Applied Physics Letters,1996,68(06):832-834. |
| [32] | Lee S M;Park M;Park K C et al.[J].Japanese Journal of Applied Physics,1996,35(2B):1579-1582. |
| [33] | Kin D S;Lee Y H;Park N H .[J].Apl Phys Lett,1996,69(18):2776-2778. |
| [34] | Lubguban Jr J;Saitoh A;Kurata Y et al.[J].Thin Solid Films,1999,337:67-70. |
| [35] | Kitoh H;Muroyama M;Sasaki M et al.[J].Japanese Journal of Applied Physics,1996,35(2B):1464-1467. |
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