Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

稀有金属（英文版）, 2006, 25(z1): 110-114.

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1.Department of Materials Science & Engineering, Inha University, 253 Yonghyeon-dong, Incheon 402-751, Korea

2.Department of Materials Science & Engineering, Inha University, 253 Yonghyeon-dong, Incheon 402-751, Korea

3.Department of Materials Science & Engineering, Inha University, 253 Yonghyeon-dong, Incheon 402-751, Korea

4.Department of Materials Science & Engineering, Inha University, 253 Yonghyeon-dong, Incheon 402-751, Korea

Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2[Diethylzinc,DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·m with a hole concentration of 3.71×1017cm-3 . Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is ap-type semiconductor.

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Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

参考文献