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  4. 透明导电ZnO:In薄膜光电性能的研究进展

材料导报, 2009, 23(15): 29-34.

透明导电ZnO:In薄膜光电性能的研究进展

方亮 1, , 彭丽萍 2, , 杨小飞 3, , 周科 4, , 吴芳 5,

1.重庆大学应用物理系,重庆,400044;重庆大学光电技术及系统教育部重点试验室,重庆,400044

2.重庆大学应用物理系,重庆,400044

3.重庆大学应用物理系,重庆,400044

4.重庆大学应用物理系,重庆,400044

5.重庆大学应用物理系,重庆,400044

基金项目:   重庆市自然科学基金(CSTC2007BB4137)   重庆大学大型设备开放基金   重庆大学211工程三期创新人才培养计划建设项目(S-09109)   重庆大学研究生科技创新项目(200904Al B0010314)  

关键词： 宽禁带半导体材料 , ZnO:In薄膜 , 光学性质 , 电学性质

Research Advances of Opto-electrical Properties of Transparent Conductive ZnO:In Films

本征ZnO是高阻材料,如何对其进行掺杂,提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键.从晶体结构和能带结构、影响光电性能的因素、透明导电机制、提高光电性能的途径等方面综述了In掺杂ZnO(ZnO:In)薄膜光电性能的研究进展,提出了降低ZnO:In薄膜电阻率和提高透光率的有效途径,并对未来的发展方向进行了简要说明.

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