材料期刊网

The magnetic and electronic transport properties of the compound Pr5Ge4 were investigated by means of magnetic and electrical resistivity measurements. The results indicate that for the compound Pr5Ge4 there are two magnetic transitions at T-C(I) = 25 K and T-C(II) = 41 K in a low field of 500 Oe. In analogy to Nd5Ge4 compound, the magnetic structure of Pr5Ge4 may be a canted one, which can be induced by a competition between nearest-neighbor Pr-Pr ferromagnetic (FM) and Pr-Pr antiferromagnetic (AFM) exchange interactions. The main contribution to the electrical resistivity of Pr5Ge4 is the scattering of conduction electrons on localized magnetic moments. A large magnetoresistance (Deltarho/rho) was observed (about 25% at 24 K and 15% at 40 K) in the presence of a magnetic field of 50 kOe.