在低合金钢基体上磁控溅射镀Cr/Cu双层膜,电沉积铜-金刚石复合过渡层,在热丝CVD系统中沉积了连续的金刚石膜.用压痕实验研究了所沉积的金刚石膜/基结合性能,用扫描电镜(SEM)、X射线(XRD)、拉曼光谱表征了金刚石膜的表面形貌、相结构和内应力.结果表明,经CVD金刚石沉积后Cr层转化为铬铁碳化物层,阻止了Fe对界面金刚石的石墨化,并部分缓冲相变应力;较软的Cu层能有效缓解相变应力和热应力,降低了所沉积的金刚石膜内应力;用441N载荷对所沉积的金刚石膜进行压痕评估,压痕外缘只产生环状裂纹,表明膜基结合力较高.
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