本文采用新型的自行研制的化学机械抛光液,对碲锌镉晶体进行了化学机械抛光方法的尝试性试验,并分析了在化学机械抛光(CMP)过程中抛光垫的硬度、磨料的种类、氧化剂、抛光液的pH值对表面质量和材料去除率的影响,提出适合软脆功能晶体碲锌镉的高效低损伤抛光工艺.结果表明,采用自行研制的带有硝酸的化学机械抛光液,在pH优化值为2.5时,15 min即可获得Ra为0.67 nm的超光滑无损伤表面,大大提高了加工效率和精度.
参考文献
| [1] | Jung I;Krawczynski H;Burger A;Guo M;Groza M .Detailed studies of pixelated CZT detectors grown with the modified horizontal Bridgman method[J].Astroparticle physics,2007(4-5):397-408. |
| [2] | Garrity DJ;Jenneson PM;Vincent SM .Transmission geometry X-ray diffraction for materials research[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2007(1):412-415. |
| [3] | 王昆黍,桑文斌,闵嘉华,腾建勇,张奇,夏军,钱永彪.CdZnTe材料的表面钝化新工艺[J].半导体学报,2005(07):1475-1479. |
| [4] | 李奇峰,朱世富,赵北君,蔡力,高德友,金应荣.高阻碲锌镉单晶体的生长及其性能观测[J].半导体学报,2002(02):157-160. |
| [5] | Alsager AA;Spyrou NM .Evaluation of image performance of CZT detector for digital mammography: Monte Carlo simulation[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2007(1):462-465. |
| [6] | Wang XQ;Jie WQ;Li Q;Gu Z .Surface passivation of CdZnTe wafers[J].Materials science in semiconductor processing,2005(6):615-621. |
| [7] | R. SINGH;S. VELICU;J. CROCCO;Y. CHANG;J. ZHAO;L.A. ALMEIDA;J. MARKUNAS;A. KALECZYC;J.H. DINAN .Molecular Beam Epitaxy Growth of High-Quality HgCdTe LWIR Layers on Polished and Repolished CdZnTe Substrates[J].Journal of Electronic Materials,2005(6):885-890. |
| [8] | 查钢强,介万奇,李强,刘永勤.CdZnTe单晶的机械抛光及其表面损伤层的测定[J].功能材料,2006(01):120-122. |
| [9] | 查钢强 .CdZnTe单晶表面、界面及位错的研究[D].西北工业大学,2007. |
| [10] | 马世昌.基础化学反应[M].西安:陕西科学技术出版社,2001:280. |
| [11] | 马淑英;介万奇;华慧 等.抛光液以及抛光Ⅱ-Ⅵ族化合物半导体晶片的方法[P].CN 200610105133.0,2007. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%