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利用射频磁控溅射技术在玻璃衬底上沉积了MgxZn1-xO(x=0~0.2)薄膜.采用X射线衍射仪、紫外-可见光分光光度计和荧光光谱仪研究了Mg掺杂量对MgxZn1-xO薄膜结构与光学性能的影响.XRD图谱表明,MgxZn1-xO薄膜均为六角纤锌矿结构,并且呈现出C轴择优生长特性,当x>0.1时薄膜出现(100)面衍射峰,薄膜的c轴择优生长特性减弱,随着x值的增加,晶格常数c逐渐减小.紫外可见光透射光谱表明,Mg的掺入提高了薄膜在可见光范围内的透过率,同时使薄膜的禁带宽度增大.PL谱分析显示,Mg的掺入使薄膜的紫外发射峰和蓝光发射带发生蓝移,当x=0.1时近带边发射峰与杂质发射的强度比值最高.

参考文献

[1] Xing G Z;Yao B et al.Effect of annealing on conductivitybehavior of undoped zinc oxide prepared by rf magnetronsputtering[J].Journal of Alloys and Compounds,2008,457(1-2):36.
[2] Mandal S;Singha R K;Dhar A et al.Optical and structu-ral characteristics of ZnO thin films grown by rf magnetronsputtering EJ3[J].Materials Research Bulletin,2008,43(02):244.
[3] Ohtomo A.;Koida T.;Masubuchi K.;Koinuma H.;Sakurai Y. Yoshida Y.;Yasuda T.;Segawa Y.;Kawasaki M. .MgxZn1-xO as a II-VI widegap semiconductor alloy[J].Applied physics letters,1998(19):2466-2468.
[4] 章天金,黄卫华,张柏顺.Mg掺杂ZnO薄膜的结构和光学性质[J].湖北大学学报(自然科学版),2006(04):371-374.
[5] 李春,方国家,赵兴中.带隙可调的宽禁带半导体MgxZn1-xO薄膜研究进展[J].功能材料,2005(02):177-180.
[6] R. Ghosh;D. Basak .The effect of growth ambient on the structural and optical properties of Mg_xZn_(1-x)O thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(16):7238-7242.
[7] Suryanarayana Reddy A;Prathap P;Subbaiah Y P V et al.Growth and physical behaviour of Znl-xMgxO films[J].Thin S0lid Films,2008,516(20):7084.
[8] Zhang Xinjian;Ma Honglei;Wang Qingpu et al.Structural and optical properties of MgxZn1-xO thin films deposited by magnetron sputtering[J].Physcia B,2005,364(1-4):157.
[9] 王秀琴,袁宁一,范利宁,李金华.Mg2+掺杂对ZnO薄膜结构和光学性能的影响[J].江苏工业学院学报,2007(03):1-3.
[10] Swanepoel R .Determination of the thickness and optical constants of amorphous silicon[J].Journal of Physics E:Scientific Instruments,1983,16(12):1214.
[11] Ajay Kausha;Davinder Kaur .Effect of Mg content on structural,electrical and optical properties of Znl-xM nanoeomposite thin films[J].Solar Energy Mater SolarCells,2009,93(02):193.
[12] Dong X;Zhang BL;Li XP;Zhao W;Xia XC;Zhu HC;Du GT .Study on the properties of MgxZn1-xO-based homojunction light-emitting diodes fabricated by MOCVD[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(23):7298-7301.
[13] 方庆清,王伟娜,周军,王胜男,闫方亮,刘艳美,李雁,吕庆荣.Zn1-xMgxO薄膜的光致发光特性研究[J].物理学报,2009(08):5836-5841.
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