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通过自组装层法、磁控溅射依次在SiO2基底上化学镀制备了Ni-Mo-P、Cu薄膜,薄膜厚度和成分通过X射线荧光仪(XRF)测定.对SiO2/Ni-Mo-P/Cu体系进行了400 ~ 600℃的热处理,利用X射线衍射仪(XRD)对物相结构的稳定性进行了测定,利用场发射扫描电镜(FE-SEM)和电子能谱仪(EDS)对表面形貌的稳定性进行了观察和成分分析.结果表明,在400和500℃热处理后,体系稳定性良好,但在较快的降温速率(40℃/min)条件下,SiO2/Ni-Mo-P/Cu体系在600℃热处理后失效,根据热失配应力,提出了薄膜破裂模型,Ni-Mo-P薄膜与SiO2界面断裂能为2.12 J/m2.Cu薄膜在600℃热处理时发生团聚,Cu在Ni-Mo-P上的团聚激活能为1.15 eV,大于Cu在SiO2上的团聚激活能0.6 eV.

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