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采用直流反应磁控溅射方法在AISI304不锈钢和Si(100)表面沉积了TiN薄膜,利用场发射扫描电镜、X射线衍射仪和电化学技术研究了基体温度对TiN薄膜结构与电化学性能的影响.结果表明:TiN薄膜为柱状结构,表面平整、致密,但基体温度高于300℃时膜表面存在微裂纹.薄膜为面心立方结构δ-TiN并存在择优取向,室温和150℃时的薄膜择优取向为(111)晶面,300℃和450℃时为(200)晶面;基体为室温时薄膜厚度为0.63 μm,温度提高到150℃后膜厚增加到1μm左右,但继续升温对膜厚影响并不明显.薄膜在NaCl溶液中的腐蚀为点蚀,基体温度为150℃时的TiN薄膜具有最高的开路电位和点蚀电位以及最低的腐蚀速率,因此具有最佳的耐蚀性.

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