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运用原位磷注入合成法在高压单晶炉内合成富磷的InP熔体,并利用液封直拉法(LEC)生长出了3英寸富磷掺Fe的InP单晶.运用高分辨率X射线衍射技术、偏振差分透射谱测试技术、光致荧光谱技术对富磷掺Fe的InP晶片进行了结构、应力及发光特性测试.结果表明,晶格的应变导致了PL发光峰峰位的变化,晶格应变与残留应力测试结果相一致,说明材料生长过程中的热应力是导致样品晶格常数分布不均匀的主要因素.

参考文献

[1] Kim, D.-H.;Chen, P.;Kim, T.-W.;Urteaga, M.;Brar, B. .L<sub>g</sub> = 100 nm InAs PHEMTs on InP substrate with record high frequency response[J].Electronics Letters,2012(21):1352-1353.
[2] 李果华,孙艳宁,Woodall J M,严辉,Freeouf J L.新型单晶薄膜InP太阳电池的光谱响应[J].人工晶体学报,2004(05):845-847.
[3] Matthew P. Lumb;Michael K. Yakes;Maria Gonzalez;Igor Vurgaftman;Christopher G. Bailey;Raymond Hoheisel;Robert J. Walters .Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells[J].Applied physics letters,2012(21):213907-1-213907-4.
[4] Takayuki Watanabe;Stephane Boubanga Tombet;Yudai Tanimoto;Yuye Wang;Hiroaki Minamide;Hiromasa Ito;Denis Fateev;Viacheslav Popov;Dominique Coquillat;Wojciech Knap;Yahya Meziani;Taiichi Otsuji.Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure[J].Solid-State Electronics,2012:109-114.
[5] Xiaolong Zhou;Youwen Zhao;Niefeng Sun;Guangyao Yang;Yongqiang Xu;Tongnian Sun .Study on the perfection of in situ P-injection synthesis LEC-InP single crystals[J].Journal of Crystal Growth,2004(1/3):17-20.
[6] Mishra, R.;Restrepo, O.D.;Kumar, A.;Windl, W. .Native point defects in binary InP semiconductors[J].Journal of Materials Science,2012(21):7482-7497.
[7] Chen NF.;He HJ.;Lin LY.;Wang YT. .EFFECTS OF POINT DEFECTS ON LATTICE PARAMETERS OF SEMICONDUCTORS[J].Physical Review.B.Condensed Matter,1996(12):8516-8521.
[8] 周祎,张昌文,王培吉.Fe对InP材料电子结构及光学性质的调控机理研究[J].人工晶体学报,2013(11):2432-2438.
[9] 周振宇,陈涌海.用偏振差分透射谱技术测量半导体晶体片应力分布[J].硅酸盐通报,2008(03):580-583.
[10] 赵有文,段满龙,孙文荣,杨子祥,焦景华,赵建群,曹慧梅,吕旭如.提高(100)晶向磷化铟单晶的成晶率和质量的研究[J].人工晶体学报,2003(05):460-463.
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