用临界钝化电流（CriticalPassivationCurrentDensity．CPCD）法和液晶法，研究了不锈钢上Ta2O5，ZrO2的高频溅射膜的缺陷率建立了CPCD法中与薄膜有关的电流密度If与膜厚d之间的关系式：If＝k（1－θ）d．利用液晶的动态散射模型（DynamicScatteringMode，DSM），建立了动态无损伤检测膜缺陷率的新方法，并证明了这两种方法的检测结果有良好的直线关系。
The defects in Ta2O5 and ZrO2 films prepared by RF sputtering on SUS304stainless steel were studied by CPCD (critical passivation current density) and liquid crystalmethods. In CPCD method a relation between current density if and film thickness wasgiven: If= K(1-0)d. Using DSM (dynamic scattering mode) of liquid crystal, a new methodabout nondestructive testing of film defects was reported. The results of the two methodsshowed a good linear relation.
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