欢迎登录材料期刊网

材料期刊网

中国科学院金属研究所 科学出版社
高级检索
  1. 首页
  2. 期刊
  3. 材料导报
  4. 热蒸发法制备第Ⅳ族半导体纳米线的研究进展

材料导报, 2013, 27(11): 27-32.

热蒸发法制备第Ⅳ族半导体纳米线的研究进展

李瑞 1, , 张析 2, , 张丹青 3, , 向钢 4,

1.四川大学物理科学与技术学院辐射物理与技术教育部重点实验室,成都610064

2.四川大学物理科学与技术学院辐射物理与技术教育部重点实验室,成都610064

3.四川大学物理科学与技术学院辐射物理与技术教育部重点实验室,成都610064

4.四川大学物理科学与技术学院辐射物理与技术教育部重点实验室,成都610064

基金项目:   教育部新世纪优秀人才支持计划(11-0351)   国家自然科学基金(11004142)  

关键词： 热蒸发法 , 第Ⅳ族半导体 , Si纳米线 , Ge纳米线 , SiGe纳米线

Research Progress on Synthesizing Ⅳ Semiconductor Nanowires by Thermal Evaporation

系统地分析了压强和温度在热蒸发法生长中对Si纳米线的产量和形貌结构的影响,并全面解析了用热蒸发法制备Ⅳ族纳米线的氧化物辅助生长机理.同时,对国内外采用热蒸发法制备第Ⅳ族半导体(Si、Ge、SiGe)纳米线的研究现状进行了详细介绍,并展望了其应用前景.

参考文献

[1] Mourik V;Zuo K;Frolov S M et al.Signatures of majoranafermions in hybrid superconductor-semiconductor nanowire devices[J].Science,2012,336(6084):1003.
[2] Liao L;Lin Y C;Bao M et al.High-speed graphene transistors with a self-aligned nanowire gate[J].Nature,2010,467(7313):305.
[3] Yan, RX;Gargas, D;Yang, PD .Nanowire photonics[J].Nature photonics,2009(10):569-576.
[4] Perge S N;Frolov S M;Bakkers E P A M et al.Spin-orbit qubit in a semiconductor nanowire[J].Nature,2010,468(7327):1084.
[5] Yan H;Choe H S;Nam S W et al.Programmable nanowire circuits for nanoprocessors[J].Nature,2011,470(7333):240.
[6] Song MS;Jung JH;Kim Y;Wang Y;Zou J;Joyce HJ;Gao Q;Tan HH;Jagadish C .Vertically standing Ge nanowires on GaAs(110) substrates[J].Nanotechnology,2008(12):125602-1-125602-6-0.
[7] Kim BS;Koo TW;Lee JH;Kim DS;Jung YC;Hwang SW;Choi BL;Lee EK;Kim JM;Whang D .Catalyst-free Growth of Single-Crystal Silicon and Germanium Nanowires[J].Nano letters,2009(2):864-869.
[8] Shin, N.;Filler, M.A. .Controlling silicon nanowire growth direction via surface chemistry[J].Nano letters,2012(6):2865-2870.
[9] C. B. Li;K. Usami;H. Mizuta;S. Oda .Vapor-solid-solid radial growth of Ge nanowires[J].Journal of Applied Physics,2009(4):046102-1-046102-3.
[10] Marshall, A.F.;Goldthorpe, I.A.;Adhikari, H.;Koto, M.;Wang, Y.-C.;Fu, L.;Olsson, E.;McIntyre, P.C. .Hexagonal close-packed structure of au nanocatalysts solidified after Ge nanowire vapor-liquid-solid growth[J].Nano letters,2010(9):3302-3306.
[11] Duan XF.;Lieber CM. .General synthesis of compound semiconductor nanowires[J].Advanced Materials,2000(4):298-302.
[12] X. Wang;K. L. Pey;W. K. Choi;C. K. F. Ho;E. Fitzgerald;D. Antoniadis .Arrayed Si/SiGe Nanowire and Heterostructure Formations via Au-Assisted Wet Chemical Etching Method[J].Electrochemical and solid-state letters,2009(5):K37-K40.
[13] Chan CK;Peng HL;Liu G;McIlwrath K;Zhang XF;Huggins RA;Cui Y .High-performance lithium battery anodes using silicon nanowires[J].Nature nanotechnology,2008(1):31-35.
[14] Barbara Laik;Laurent Eude;Jean-Pierre Pereira-Ramos;Costel Sorin Cojocaru;Didier Pribat;Emmanuelle Rouviere .Silicon nanowires as negative electrode for lithium-ion microbatteries[J].Electrochimica Acta,2008(17):5528-5532.
[15] Garnett, E;Yang, PD .Light Trapping in Silicon Nanowire Solar Cells[J].Nano letters,2010(3):1082-1087.
[16] Kuiqing Peng;Xin Wang;Shuit-Tong Lee .Silicon nanowire array photoelectrochemical solar cells[J].Applied physics letters,2008(16):163103-1-163103-3-0.
[17] Zheng G;Patolsky F;Cui Y;Wang WU;Lieber CM .Multiplexed electrical detection of cancer markers with nanowire sensor arrays[J].Nature biotechnology,2005(10):1294-1301.
[18] Tutuc E;Appenzeller J;Reuter MC;Guha S .Realization of a linear germanium nanowire p-n junction[J].Nano letters,2006(9):2070-2074.
[19] Wang J F;Gudiksen M S;Duan X F et al.Highly polarized photoluminescence and photodetection from single indium phosphide nanowires[J].Science,2001,293(5534):1455.
[20] Q. Wan;Q. H. Li;Y. J. Chen;T. H. Wang;X. L. He;J. P. Li;C. L. Lin .Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors[J].Applied physics letters,2004(18):3654-3656.
[21] Kobayashi M;Hiramoto T .Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors[J].Journal of Applied Physics,2008(5):053709-1-053709-6-0.
[22] Yang, P.;Yan, R.;Fardy, M. .Semiconductor nanowire: Whats Next?[J].Nano letters,2010(5):1529-1536.
[23] Xueming Yang;Albert C To;Rong Tian .Anomalous heat conduction behavior in thin finite-size silicon nanowires[J].Nanotechnology,2010(15):155704:1-155704:6.
[24] Kuan-I Chen;Bor-Ran Li;Yit-Tsong Chen .Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation[J].Nano Today,2011(2):131-154.
[25] Boukai AI;Bunimovich Y;Tahir-Kheli J;Yu JK;Goddard-WA 3rd;Heath JR .Silicon nanowires as efficient thermoelectric materials.[J].Nature,2008(7175):168-171.
[26] Liu, X.H.;Zhang, L.Q.;Zhong, L.;Liu, Y.;Zheng, H.;Wang, J.W.;Cho, J.-H.;Dayeh, S.A.;Picraux, S.T.;Sullivan, J.P.;Mao, S.X.;Ye, Z.Z.;Huang, J.Y. .Ultrafast electrochemical lithiation of individual Si nanowire anodes[J].Nano letters,2011(6):2251-2258.
[27] Li, L;Fang, XS;Chew, HG;Zheng, F;Liew, TH;Xu, XJ;Zhang, YX;Pan, SS;Li, GH;Zhang, LD .Crystallinity-controlled germanium nanowire arrays: Potential field emitters[J].Advanced Functional Materials,2008(7):1080-1088.
[28] Pho Nguyen;Hou T. Ng;M. Meyyappan .Growth of Individual Vertical Germanium Nanowires[J].Advanced Materials,2005(5):549-553.
[29] Yu B;Sun XH;Calebotta GA;Dholakia GR;Meyyappan M .One-dimensional germanium nanowires for future electronics[J].Journal of cluster science,2006(4):579-597.
[30] Fischetti MV.;Laux SE. .BAND STRUCTURE, DEFORMATION POTENTALS, AND CARRIER MOBILITY IN STRAINED SI, GE, AND SIGE ALLOYS [Review][J].Journal of Applied Physics,1996(4):2234-2252.
[31] Whang SJ;Lee SJ;Yang WF;Cho BJ;Kwong DL .Study on the synthesis of high quality single crystalline Si1-xGex nanowire and its transport properties[J].Applied physics letters,2007(7):72105-1-72105-3-0.
[32] Yang WF;Lee SJ;Liang GC;Whang SJ;Kwong DL .Electrical transport of bottom-up grown single-crystal Si1-xGex nanowire[J].Nanotechnology,2008(22):225203-1-225203-4-0.
[33] R. Pekoz;J.-Y. Raty .From bare Ge nanowire to Ge/Si core/shell nanowires: A first-principles study[J].Physical review, B. Condensed matter and materials physics,2009(15):155432:1-155432:7.
[34] Doyoung Jang;Jae Woo Lee;Kiichi Tachi;Laurent Montes;Thomas Ernst;Gyu Tae Kim;Gerard Ghibaudo .Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors[J].Applied physics letters,2010(7):073505-1-073505-3.
[35] Yixi Zhang;Gangxu Gu;Gang Xiang .Nonlinear Concentration-Dependent Electronic and Optical Properties of Si_(1-x)Ge_x Alloy Nanowires[J].The journal of physical chemistry, C. Nanomaterials and interfaces,2012(33):17934-17938.
[36] Xiang, J;Lu, W;Hu, YJ;Wu, Y;Yan, H;Lieber, CM .Ge/Si nanowire heterostructures as high-performance field-effect transistors[J].Nature,2006(7092):489-493.
[37] R. Pekoz;O. B. Malcioglu;J.-Y. Raty .First-principles design of efficient solar cells using two-dimensional arrays of core-shell and layered SiGe nanowires[J].Physical review, B. Condensed matter and materials physics,2011(3):035317:1-035317:6.
[38] Zhang R Q;Lifshitz Y;Lee S T .Oxide-assisted growth of semiconducting nanowries[J].Advanced Materials,2003,15(7-8):635.
[39] N. Wang;Y. H. Tang;Y. F. Zhang;C. S. Lee;I. Bello;S. T. Lee .Si nanowires grown from silicon oxide[J].Chemical Physics Letters,1999(2):237-242.
[40] Shi WS.;Zheng YF.;Wang N.;Shang NG.;Pan ZW.;Lee CS.;Lee ST.;Peng HY. .Synthesis of large areas of highly oriented, very long silicon nanowires[J].Advanced Materials,2000(18):1343-1345.
[41] Ma DDD.;Lee CS.;Au FCK.;Tong SY.;Lee ST. .Small-diameter silicon nanowire surfaces[J].Science,2003(5614):1874-1877.
[42] Y. Qin;X. N. Zhang;K. Zheng;H. Li;X. D. Han;Z. Zhang .Unusual catalyst-free epitaxial growth of silicon nanowires by thermal evaporation[J].Applied physics letters,2008(6):063104-1-063104-3-0.
[43] H PAN;S LIM;C POH .Growth of Si nanowires by thermal evaporation[J].Nanotechnology,2005(4):417-421.
[44] Wang N.;Zhang YF.;Lee CS.;Lee ST.;Tang YH. .Nucleation and growth of Si nanowires from silicon oxide[J].Physical Review.B.Condensed Matter,1998(24):R16024-R16026.
[45] Phase diagram of Si nanowire growth by disproportionation of SiO[J].Journal of Crystal Growth,2010(10):p.1751.
[46] Yiying Wu;Peidong Yang .Germanium Nanowire Growth via Simple Vapor Transport[J].Chemistry of Materials,2000(3):605-607.
[47] Yu B;Sun XH;Calebotta GA;Dholakia GR;Meyyappan M .One-dimensional germanium nanowires for future electronics[J].Journal of cluster science,2006(4):579-597.
[48] Sutter E;Ozturk B;Sutter P .Selective growth of Ge nanowires by low-temperature thermal evaporation[J].Nanotechnology,2008(43):435607-1-435607-6-0.
[49] X H Sun;C Didychuk;T K Sham .Germanium nanowires: synthesis, morphology and local structure studies[J].Nanotechnology,2006(12):2925-2930.
[50] Z. Jiang;T. Xie;G.Z. Wang .GeO_2 nanotubes and nanorods synthesized by vapor phase reactions[J].Materials Letters,2005(4):416-419.
[51] Su Y;Liang X;Li S et al.Self-catalytic VLS growth and optical properties of single-crystalline GeO2 nanowire arrays[J].Materials Letters,2008,62(6-7):1010.
[52] Zhang Y F et al.Germanium nanowires sheathed with an oxide layer[J].Physical Review B:Condensed Matter,2000,61(07):4518.
[53] Kok-Keong Lew;K.-K. Lew;L. Pan;E. C. Dickey .Vapor-Liquid-Solid Growth of SIlicon-Germanium Nanowires[J].Advanced Materials,2003(24):2073-2076.
[54] Thermal conductivity of Si/SiGe superlattice nanowires[J].Applied physics letters,2003(15):3186-3188.
[55] Zakharov ND;Werner P;Gerth G;Schubert L;Sokolov L;Gosele U .Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy[J].Journal of Crystal Growth,2006(1):6-10.
[56] Dube C L;Kashyap S C;Dube D C et al.Room temperature photoluminescence and dc resistivity of alloy nanowires grown in microwave H-field[J].Journal of Alloys and Compounds,2009,488(01):328.
[57] Dube C L;Kashyap S C;Dube D C et al.Growth of Si0.75Ge0.25 alloy nanowires in a separated H-eldby microwave processing[J].Applied Physics Letters,2009,94(21):213107.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
作者相关
文章评分
  • 您的评分：
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%

版权所有©2010中国科学院金属研究所中国科技出版传媒股份有限公司

本系统由北京仁和汇智信息技术有限公司设计开发

技术支持：info@rhhz.net