本文提出一种新的切向喷射式MOCVD反应器,反应气体从均匀分布于内壁的切向进口喷管喷入反应器,尾气从位于反应器中心的上方或下方出口排出.通过切向喷射,使气体发生人工可控的螺旋流,在水平方向逐渐旋转与加速,从而补偿反应物浓度从边缘进口到中心出口的沿程损失,以便获得均匀的薄膜沉积.针对新的反应器设计,结合GaN的MOCVD生长进行了三维数值模拟,确定了喷管夹角、喷管数目和反应器高度对生长区的温场、流场和浓度场的影响,优化了参数组合,并与传统的垂直喷射式反应器作了对比.此外,这款新型反应器能够摆脱复杂的托盘旋转系统.
参考文献
| [1] | Hitchman M L;Jensen K F;Eds.Chemical Vapor Deposition[M].London,UK:Academic Press,1993 |
| [2] | Fotiadis D;Kieda S;Jensen K F .Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy:Ⅰ.Effects of Heat Transfer Characteristics,Reactor Geometry and Operating Conditions[J].Journal of Crystal Growth,1990,102:441-470. |
| [3] | W. K. Cho;D. H. Choi .Optimization of a horizontal MOCVD reactor for uniform epitaxial layer growth[J].International Journal of Heat and Mass Transfer,2000(10):1851-1858. |
| [4] | Weyburne D W;Ahern B S .Design and Operating Considerations for a Water-cooled Close-spaced Reactant Injector in a Production Scale MOCVD Reactor[J].Journal of Crystal Growth,1997,170:77-82. |
| [5] | William G. Breiland;Michael E. Coltrin;J. Randall Creighton;Hong Q. Hou;Harry K. Moffat;Y. Tsao .Organometallic vapor phase epitaxy (OMVPE)[J].Materials Science & Engineering, R. Reports: A Review Journal,1999(6):241-274. |
| [6] | 刘奕,陈海昕,符松.GaN-MOCVD设备反应室流场的CFD数值仿真[J].半导体学报,2004(12):1639-1646. |
| [7] | FLUENT 6.2 User's Guide[M].Fluent Inc,2005 |
| [8] | Jensen K F;Einset E O;Fotiadis D L .Flow Phenomena in Chemical Vapor Deposition of Thin Films[J].Annual Review of Fluid Mechanics,1991,23:197-232. |
| [9] | Panton R L.Incompressible flow[M].John Wiley and Sons,Inc,1984 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%