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采用化学气相输运法在常压开放系统中,以ZnO粉体为原料,HCl和NH3为输运气体,O2和H2O为反应气体,适度过量的HCl作为刻蚀性气体,在(0001)方向的蓝宝石籽晶片上制备了(0002)方向定向生长的ZnO晶体,且a、b轴生长速度明显高于c轴方向.以(0002)方向的ZnO籽晶片作基片,制备了ZnO单晶厚膜,晶体呈螺旋状外延生长,正极面的单晶摇摆曲线半高宽为543.6弧秒.

参考文献

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[6] 魏学成,赵有文,董志远,李晋闽.ZnO单晶的缺陷及其对材料性质的影响[J].半导体学报,2006(10):1759-1762.
[7] Matsumoto K;Konemura K;Shimaoka G .Crystal Growth of ZnO by Vapor Transport in a Closed Tube Using Zn and ZnCl2 as Transport Agents[J].Journal of Crystal Growth,1985,71:99-103.
[8] Makoto Mikami;Toshiaki Eto;JiFeng Wang;Yoshihiko Masa;Minoru Isshiki .Growth of zinc oxide by chemical vapor transport[J].Journal of Crystal Growth,2005(3/4):389-392.
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[10] 韦志仁,李振军,高平,尹利君,黄存新,张利明,姚金宝.化学气相输运法制备ZnO晶体[J].人工晶体学报,2009(02):346-349,353.
[11] 韦志仁,李振军,高平,张利明,董国义.化学气相输运法(CVT)制备微米级的喇叭管状ZnO晶体[J].无机化学学报,2008(04):653-656.
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