以Ga2O3为主要原料,通过氨气氮化反应合成了单相GaN粉体.利用X射线衍射(XRD)、扫瞄电镜(SEM)和荧光光谱(PL)分析在900～1050 ℃范围内,氮化温度和时间对产物的影响.结果表明:氮化温度在920 ℃以上时能够生成纯度较高的六方铅锌矿型GaN粉体,反应温度达到1000 ℃时,合成的粉体具有良好的结晶性能;当反应温度为1000 ℃,氮化时间为1.5 h时,所得样品发光性能优异.反应产物初始的平板和柱状结构显示了系统反应开始为气-固机制(V-S),但随时间的延长转变为以分解-重结晶为主导的合成机制,该机制使得粉体颗粒细化,并随着反应温度的提高以及氮化时间的延长,细化效果更加明显.
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