分别用红外光谱测量系统和双光束分光光度计研究了室温下碳化硅单晶的光学性质,测得碳化硅晶体的透射率和反射率随波变化的关系.通过掺氮与非掺杂碳化硅各种光谱的比较,发现掺氮不仅使近红外透射率降低,也导致反射率下降,掺氮碳化硅晶体在可见光部分出现了比较明显的吸收带.此外,利用透射谱还获得非掺杂6H-SiC晶体的折射率.
Optical properties of silicon carbide single crystal at room temperature are investigated by the infrared measurement system and the double beam spectrophotometer respectively, and the transmission and reflectivity of SiC as a function of wavelength are obtained. Through the comparison of the spectrum of N-doped SiC with SiC spectrum,it is found that nitrogen doping reduces the transmission and reflectivity in the near infrared range. Moreover,there is an obvious absorption band in the visible spectrum of N-doped SiC. Additionally, the refractive index of 6H-SiC is also obtained using transmission spectrum.
参考文献
| [1] | Henry A;Kordina O;Hallin C .Photoluminescence determination of the nitrogen doping concentration in 6H-SiC[J].Applied Physics Letters,1994,65(19):2457. |
| [2] | 杨银堂 .碳化硅半导体技术新进展[J].西安电子科技大学学报,1998,25(04):478. |
| [3] | 陈之战,肖兵,施尔畏,庄击勇,刘先才.大尺寸 6H-SiC半导体单晶材料的生长[J].无机材料学报,2002(04):685-690. |
| [4] | 韩荣江,王继扬,胡小波,董捷,李现祥,李娟,王丽,徐现刚,蒋民华.6H-SiC单晶（0001）Si-面的表面生长形貌[J].人工晶体学报,2004(03):335-338. |
| [5] | 华庆恒.Ⅲ-Ⅴ族化合物半导体红外光谱研究[J].固体电子学研究与进展,1985(04):295. |
| [6] | Yaguchi H;Narita K;Hijikata Y .Spatial mapping of the carrier concentration and mobility in SiC wafers by micro fourier tansform infrared spectroscopy[J].Materials Science Forum,2002,621:389. |
| [7] | S. Nakashima;H. Harima .Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons[J].Journal of Applied Physics,2004(7):3541-3546. |
| [8] | 李志锋,陆卫,叶红娟,袁先璋,沈学础,G.Li S.J.Chua.GaN载流子浓度和迁移率的光谱研究[J].物理学报,2000(08):1614-1619. |
| [9] | Macmillan MF.;Choyke WJ.;Goldstein DR.;Spanier JE.;Kurtz AD.;Devaty RP. .INFRARED REFLECTANCE OF THICK P-TYPE POROUS SIC LAYERS[J].Journal of Applied Physics,1996(4):2412-2419. |
| [10] | Sunkari S;Mzaaola M S;Mazzlola J P .Investigation of longitudinal-optical-phonon plasmon-coupled mode in SiC epitaxial film using fourier tansform infrared reflection[J].Journal of Electronic Materials,2005,34(04):320. |
| [11] | Neyret B;Ferro G;Juillaguet S .Optical investigation of residual dopings pecies in 6H and 4H-SiC layers grown by chemical vopor deposition[J].Material Science and Engineering,1999,B61-62:253. |
| [12] | 李娟,胡小波,王丽,李现祥,韩荣江,董捷,姜守振,徐现刚,王继扬,蒋民华.升华法生长大直径的SiC单晶[J].中国有色金属学报,2004(z1):415-418. |
| [13] | 郝跃;彭军;杨银堂.碳化硅宽带隙半导体技术[M].北京:科学出版社,2000 |
| [14] | Tairov Y M;Vodakov Y A.Topics in applied physics 17:Pankove JI[A].Berlin:Springer-Verlag,1977:31. |
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