采用磁控反应共溅射法制备了Ta-Al-N纳米薄膜及Cu/Ta-Al-N/Si结构,并在氮气保护下对薄膜进行了快速热处理,用四探针电阻测试仪、台阶仪、原子力显微镜、X射线衍射、X射线光电子能谱、扫描电镜等对薄膜进行了表征.研究表明,少量Al的掺入可降低薄膜的表面粗糙度,有效提高其热稳定性和Cu扩散阻挡能力,但同时也增大了薄膜的电阻率.Al原子分数为1.7％、厚约100nm的Ta-Al-N薄膜在800℃热处理5min后仍可保持稳定和对Cu扩散的有效阻挡,其作用机制与Al填充堵塞晶界及提高薄膜的晶化温度有关.
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