单晶硅表面局部金属化可用于一些特殊的技术领域,为了寻找成本低且环保的化学镀镍无钯活化工艺,以AgNO3为活化剂,加上适当的复合添加剂对单晶硅进行化学镀镍前活化处理.通过扫描电镜、耐蚀性试验及相关检测标准,研究了AgNO3浓度、活化时间、活化温度对镀层沉积速率、覆盖率和镀层光亮度、结合力及耐蚀性的影响.结果表明:当AgNO3浓度为3.5 ～7.5 g/L,温度为40～ 50℃,活化时间为12 ～20 min时,镀层沉积速率和覆盖率较好,镀层表面均匀、光亮、结合力强、耐蚀性好；该活化工艺及其制备的局部镍镀层能够很好地应用于多孔硅的制备.
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